Abstract
Photoluminescence (PL) experiments performed on bulk ZnO crystals are used to establish the ionization energy of the substitutional nitrogen acceptor. The temperature dependence of the nitrogen-related electron-acceptor (e,A0) emission band has been monitored in as-grown single crystals. A lineshape analysis of this band is used to determine the acceptor ionization energy. The temperature variation of the ZnO band gap was included in our analysis and the low-temperature acceptor ionization energy for substitutional nitrogen at an oxygen site in ZnO was found to be EA = 209 ± 3 meV. Electron paramagnetic resonance and Hall-effect measurements were also used to characterize these bulk ZnO samples.
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Acknowledgments
This work was supported by the Air Force Office of Scientific Research (Grant No. F49620-02-1-0254).
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Wang, L., Garces, N.Y., Halliburton, L.E. et al. Determination of the Nitrogen Acceptor Ionization Energy in Zinc Oxide by Photoluminescence Spectroscopy. MRS Online Proceedings Library 799, 251–256 (2003). https://doi.org/10.1557/PROC-799-Z5.43
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DOI: https://doi.org/10.1557/PROC-799-Z5.43