Abstract
The measurement of Shubnikov-de Haas(SdH) oscillation is proposed as a new technique for evaluating the quality of a heterointerface. The first excited state of 2-dimensional electron energy levels is determined for several samples using the measurements of SdH oscillation. Lower values of the first excited state energy are found for the samples with a low mobility. The low value can be approximately explained in terms of graded interface model.
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Kasai, K., Tanaka, H., Itoh, H. et al. Evaluation of AlGaAs/GaAs Heterointerface by Shubnikov-de Haas Oscillation Measurements. MRS Online Proceedings Library 77, 479–482 (1986). https://doi.org/10.1557/PROC-77-479
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DOI: https://doi.org/10.1557/PROC-77-479