Abstract
We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.
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Kimukin, I., Biyikli, N., Kartaloglu, T. et al. High-Performance AlGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes. MRS Online Proceedings Library 764, 322 (2002). https://doi.org/10.1557/PROC-764-C3.22
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DOI: https://doi.org/10.1557/PROC-764-C3.22