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Optical and EPR Study of Defects in Cadmium Germanium Arsenide

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Abstract

Bulk crystals of CdGeAs2 have been characterized using photoluminescence (PL), optical absorption, Hall effect, and electron paramagnetic resonance (EPR) techniques. An absorption band near 5.5 microns at room temperature is observed in all of the p-type samples we have studied. A correlation between the magnitude of this optical absorption and the excess hole concentration at room temperature is established. Also, an EPR signal is found to correlate with the strength of this absorption band. PL data are consistent with an increased concentration of shallow acceptors being present in high-absorption samples. From the EPR data, we suggest that a model for the paramagnetic defect associated with the absorption at 5.5 microns may be an acceptor on an anion site.

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References

  1. K. L. Vodopyanov and P. G. Schunemann, Optics Letters 23, 1096 (1998).

    Article  CAS  Google Scholar 

  2. P. G. Schunemann, S. D. Setzler, and T. M. Pollak, in: Conf. on Lasers and Electro-Optics, CLEO 2000, vol. 39, 355 (2000).

    Google Scholar 

  3. K. L. Vodopyanov, G. M. H. Knippels, A. F. G. van der Meer, J. P. Maffetone, and I. Zwieback, Optics Communications 202, 205 (2002).

    Article  CAS  Google Scholar 

  4. B. Kh. Mamedov and É. O. Osmanov, Sov. Phys.-Semicond. 5 1120 (1972).

    Google Scholar 

  5. I. Zwieback, D. Perlov, J. P. Maffetone, and W. Ruderman, Appl. Phys. Lett. 73, 2185 (1998).

    Article  CAS  Google Scholar 

  6. L. E. Halliburton, G. J. Edwards, P. G. Schunemann, and T. M. Pollak, J. Appl. Phys. 77, 435 (1995).

    Article  CAS  Google Scholar 

  7. J. E. McCrae, R. L. Hengehold, Y. K. Yeo, M. C. Ohmer, and P. G. Schunemann, Appl. Phys. Lett. 70, 455 (1997).

    Article  CAS  Google Scholar 

  8. J. B. Aufgang, D. Labrie, K. Olson, B. Paton, A. M. Simpson, G. W. Iseler, and A. Borshchevsky, Semicond. Sci. Technol. 12, 1257 (1997).

    Article  CAS  Google Scholar 

  9. D. W. Fischer, M. C. Ohmer, and J. E. McCrae, J. Appl. Phys. 81, 3579 (1997).

    Article  CAS  Google Scholar 

  10. A. J. Ptak, S. Jain, K. T. Stevens, T. H. Myers, P. G. Schunemann, S. D. Setzler, and T. M. Pollak in Infrared Applications of Semiconductors III, edited by M. O. Manasreh, B. J. H. Stadler, I. Ferguson, and Y.-H. Zhang (Mater. Res. Soc. Proc. 607, 427 (2000).

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Bai, L., Garces, N.Y., Yang, N. et al. Optical and EPR Study of Defects in Cadmium Germanium Arsenide. MRS Online Proceedings Library 744, 832 (2002). https://doi.org/10.1557/PROC-744-M8.32

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  • DOI: https://doi.org/10.1557/PROC-744-M8.32

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