Abstract
Bismuth layered structured ferroelectrics (BLSF) thin films with different number of octahedron number (m-number) were prepared by MOCVD and directly crystallized on the substrates. Directly-crystallized SrBi2Ta2O9 (SBT) (m=2) films on a (111) Pt/Ti/SiO2/Si substrate were ascertained to have a strong (103) one-axis orientation by the X-ray reciprocal space map** and to be hetero-epitaxially grown on the (111) Pt grains by the TEM observation. Moreover, directly crystallized Bi2VO5.5 (m=1) and Bi4Ti3O12 (m=3) films deposited on the same substrate showed (102) and (104) one-axis preferred orientations, respectively. These orientations are basically the equal ones with SBT (103) orientation because the tilting angle of c-axis from the substrate surface is also about 55°. Therefore, the direct crystallization is one of the important key techniques for orientation control of BLSF films. Moreover, the directly crystallized SBT film deposited on a (111) Ir/TiOx/SiO2/Si substrate at 570 °C by ECR-MOCVD exhibited (103) one-axis orientation, which also originated from the local epitaxial growth on (111)-oriented Ir grains. The remanent polarization (2Pr), and the coercive field (Ec) of this film were 16.1 μC/cm2 and 83 kV/cm at an applied electric field of 360kV/cm, respectively. This Pr value is about 88% of the expected value of (103)-oriented SBT film from both the Pr values of the (116) and (001)-oriented epitaxial films and detailed crystal analysis. Masayuki Fujimoto1
Similar content being viewed by others
References
K. Hironaka, C. Isobe, B. Moon and S. Hishikawa, Jpn. J. Appl. Phys. 40, 680 (2001).
N. Nukaga, M. Mitsuya and H. Funakubo, IEICE Trans. Electron. E84–C, 791 (2001).
M. Mitsuya, N. Nukaga and H. Funakubo, Jpn. J. Appl. Phys. 39, L822 (2000).
N. Nukaga, M. Mitsuya and H. Funakubo, Jpn. J. Appl. Phys. 39, 5496 (2000).
T. Watanabe, H. Funakubo and K. Saito, J. Mater. Res. 16, 303 (2001).
K. Saito, M. Mitsuya, N. Nukaga, I. Yamaji, T. Akai and H. Funakubo, Jpn. J. Appl. Phys. 39, 5489 (2000).
K. Ishikawa, A. Saiki and H. Funakubo, Jpn. J. Appl. Phys. 39, 2102 (2000).
M. Mitsuya, N. Nukaga, K. Saito, M. Osada and H. Funakubo, Jpn. J. Appl. Phys. 40, 3337 (2001).
T. Eshita, H. Yamawaki, S. Miyagaki and Y. Arimoto, Integrated Ferroelectrics. 26, 103 (1999).
Y. Shimakawa, Y. Kudo, Y. Nakagawa, T. Kamiyama, H. Asano, and F. Izumi, Appl. Phys. Lett. 74, 1904 (1999).
Y. Noguchi, M. Miyayama, and T. Kudo, Appl. Phys. Lett. 77, 3639 (2000).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Nukaga, N., Watanabe, T., Sakai, T. et al. Hetero-epitaxial Growth of (1, 0, m+1) One Axis-oriented Bismuth Layered Structured Ferroelectrics Thin Films Directly Crystallized by MOCVD. MRS Online Proceedings Library 688, 221 (2001). https://doi.org/10.1557/PROC-688-C2.2.1
Published:
DOI: https://doi.org/10.1557/PROC-688-C2.2.1