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Nanoscale Elastic Imaging of Aluminum/Low-k Dielectric Interconnect Structures

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Abstract

A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanometer scale mechanical properties of aluminum/low-k polymer damascence integrated circuit (IC) test structures. Aluminum and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution ≤ 10 nm. This technique reveals a reactive-ion etch (RIE)-induced hardening of the low-k polymer that is manifested in the final IC test structure by a region of increased hardness at the aluminum/polymer interface. The ability to characterize nanometer scale mechanical properties of materials used for IC back-end-of-line (BEOL) manufacture offers new opportunities for metrological reliability evaluation of low-k integration processes.

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Authors and Affiliations

  1. Center for Advanced Thin Film Technology, University at Albany, SUNY, Albany, NY, 12222, USA

    G. S. Shekhawat & R. E. Geer

  2. Department of Materials, Oxford University, OX1 3PH, UK

    O. V. Kolosov & G. A. D. Briggs

  3. The Dow Chemical Company, Midland, MI, 48674, USA

    E. O. Shaffer & S. Martin

Authors
  1. G. S. Shekhawat
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  2. O. V. Kolosov
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  3. G. A. D. Briggs
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  4. E. O. Shaffer
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  5. S. Martin
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  6. R. E. Geer
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Shekhawat, G.S., Kolosov, O.V., Briggs, G.A.D. et al. Nanoscale Elastic Imaging of Aluminum/Low-k Dielectric Interconnect Structures. MRS Online Proceedings Library 612, 1071 (2000). https://doi.org/10.1557/PROC-612-D10.7.1

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  • DOI: https://doi.org/10.1557/PROC-612-D10.7.1

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