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A Novel Excimer Laser Crystallization Method of Poly-Si Thin Film by Grid Line Electron Beam Irradiation

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Abstract

Excimer laser annealing technique is proposed to increase the grain size and controlling the microstructure of polycrystalline silicon (poly-Si) thin film. Our method is based on the lateral grain growth during laser annealing. Our specific grid ion beam irradiation method was designed to maximize the lateral growth effect and arrange the location of grain boundaries. We observed well-arranged poly-Si grains up to micrometer order by transmission electron microscopy (TEM).

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Authors and Affiliations

  1. School of EE, Seoul National University, Kwanak-ku, Seoul, 151-742, Korea

    C. M. Park, M. C. Lee, J. H. Jeon & M. K. Han

Authors
  1. C. M. Park
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  2. M. C. Lee
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  3. J. H. Jeon
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  4. M. K. Han
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Correspondence to M. K. Han.

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Park, C.M., Lee, M.C., Jeon, J.H. et al. A Novel Excimer Laser Crystallization Method of Poly-Si Thin Film by Grid Line Electron Beam Irradiation. MRS Online Proceedings Library 557, 171–175 (1999). https://doi.org/10.1557/PROC-557-171

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  • DOI: https://doi.org/10.1557/PROC-557-171

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