Abstract
In this paper, a novel system of electrical current induced liquid phase epitaxial apparatus is presented. Electroepitaxial growths of Ga1−xAlxAs on thin GaAs substrate were carried out at constant temperature with a dc current as the sole driving force. Constant composition Ga1−xAlxAs electroepilayers with mirror-smooth surfaces were obtained. The average rate of epitaxial growth in the system is linearly proportional to the current level passed through the substrate-melt interface. In particular, a new technique of obtaining Ga1−xAlxAs:Si p-n junctions at constant temperatures is presented for the first time: the “step-current” technique.
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Zeng, XF., Yao, GZ. & Huang, ZH. Studies of Electrical Current-Induced Liquid Phase Epitaxy of Ga1−xAlxAs:Si. MRS Online Proceedings Library 54, 389–393 (1985). https://doi.org/10.1557/PROC-54-389
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DOI: https://doi.org/10.1557/PROC-54-389