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Photoelectrochemical Etching of InxGal−xN

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Abstract

A comparison of KOH, NaOH and AZ400K solutions for UV photo-assisted etching of undoped and n+ GaN is discussed. The etching is diffusion-limited (Ea < 6kCal-mol-1) under all conditions and is significantly faster with bias applied to the sample during light exposure. No etching of InN was observed, due to the very high n-type background do** (> 1020cm-3) in the material.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA

    Hyun Cho, S. M. Donovan, C. R. Abernathy & S. J. Pearton

  2. Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611, USA

    F. Ren

  3. Sandia National Laboratories, Albuquerque, NM, 87185, USA

    J. Han & R. J. Shul

Authors
  1. Hyun Cho
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  2. S. M. Donovan
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  3. C. R. Abernathy
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  4. S. J. Pearton
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  5. F. Ren
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  6. J. Han
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  7. R. J. Shul
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Cho, H., Donovan, S.M., Abernathy, C.R. et al. Photoelectrochemical Etching of InxGal−xN. MRS Online Proceedings Library 537, 640 (1998). https://doi.org/10.1557/PROC-537-G6.40

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  • DOI: https://doi.org/10.1557/PROC-537-G6.40

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