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Ion-Beam Synthesized Semiconducting pd-FeSi2 Controlled By Annealing Procedures And Phase-Transitions

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Abstract

The ion beam synthesis (IBS) of β-FeSi2 was examined by Rutherford backscattering spectroscopy (RBS) and x-ray diffractometry (XRD), and the structural characterization was carried out by Raman spectroscopy and scanning electron microscopy (SEM). We found that the IBS of β- FeSi2 is controlled by two different processes depending on the annealing temperature (Ta) and Fe surface concentration (Cs); (I) precipitation of β-FeSi2 on the surface in Cu≈30 at% and Ta≥700° C and (II) phase transition from γ -FeSi2 to β-FeSi2 in Cs<:_20 at%and Ta≤600°C. The precipitation process(1) created large sized (:_10 μm) polycrystalline grains of β-FeSi2. The good crystalline β-FeSi2 obtained above 800 °C showed a clear reflectance maximum at 0.88 eV due to the optical transition at the direct band-gap of 0.84 eV observed in the characteristic plot ((αhv)2 vs. hv) of the optical absorption.

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Authors and Affiliations

  1. Department of Materials Sciences, Osaka Prefecture University, Sakai, Osaka, 599, Japan

    Y. Maeda, T. Fujita, T. Akita & K. Umezawa

  2. Power & Industrial Systems R&D Division, Hitachi, Ltd., Hitachi, Ibaraki, 316, Japan

    K. Miyake

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  1. Y. Maeda
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  2. T. Fujita
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  3. T. Akita
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  4. K. Umezawa
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  5. K. Miyake
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Correspondence to Y. Maeda.

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Maeda, Y., Fujita, T., Akita, T. et al. Ion-Beam Synthesized Semiconducting pd-FeSi2 Controlled By Annealing Procedures And Phase-Transitions. MRS Online Proceedings Library 486, 329–334 (1997). https://doi.org/10.1557/PROC-486-329

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