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Photoluminescence and Electron Paramagnetic Resonance of Nitrogen-Doped Zinc Selenide Epilayers

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Abstract

Photoluminescence (PL) and electron paramagnetic resonance (EPR) studies were performed on a series of ZnSe samples grown by molecular beam epitaxy. The PL has been studied as a function of excitation wavelength, power, temperature, and time. The PL data indicates that the broad emission from a heavily nitrogen-doped ZnSe film is composed of three distinct recombination processes. The EPR spectra taken at 8 K and 9.45 GHz show an isotropic signal at g = 2.0027(3) which we attribute to singly ionized selenium vacancies (Vse+). The PL and EPR data help to clarify the role of defects in the compensation of heavily nitrogen-doped ZnSe thin films.

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Authors and Affiliations

  1. Department of Physics, West Virginia University, Morgantown, WV, 26506-6315, USA

    M. Moldovan, S. D. Setzler, Z. Yu, T. H. Myers, L. E. Halliburton & N. C. Giles

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  1. M. Moldovan
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  2. S. D. Setzler
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  3. Z. Yu
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  4. T. H. Myers
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  5. L. E. Halliburton
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  6. N. C. Giles
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Moldovan, M., Setzler, S.D., Yu, Z. et al. Photoluminescence and Electron Paramagnetic Resonance of Nitrogen-Doped Zinc Selenide Epilayers. MRS Online Proceedings Library 442, 555–560 (1996). https://doi.org/10.1557/PROC-442-555

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  • DOI: https://doi.org/10.1557/PROC-442-555

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