Abstract
6H-SiC epitaxial layers with a background n-type dopant concentration of 1 × 1016/cm3 were hot implanted to doses ranging from 4.0 × 1013 to 1.8 × 1014 Al ions/cm2 at 65, 135, and 220 keV to achieve a box-type implant distribution to a depth of 300 nm. Electrical activation of dopants was carried out using a proximity annealing method at 1500°C in a buffer environment to retard surface degradation of the SiC samples. Measurements using atomic force microscopy illustrated the morphological stability of the SiC surface during the high-temperature annealing. Transmission line measurements showed some degree of dopant activation. Characterization of fabricated p-n junction diodes demonstrated p-type conduction in the aluminum-implanted SiC samples.
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Acknowledgments
MAC is supported by a Stevens Stanley Fellowship award. Part of the research was funded by the New Jersey Commission on Science and Technology. Work done at Oak Ridge National Laboratory was sponsored by the U. S. Department of Energy under Contract DE-AC05-84OR21400 with Martin Marietta Energy Systems, Inc.
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Caleca, M.A., Du, H., Flemish, J.R. et al. P-Type Do** of SiC by Aluminum Implantation for Advanced Device Applications. MRS Online Proceedings Library 410, 63–68 (1995). https://doi.org/10.1557/PROC-410-63
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DOI: https://doi.org/10.1557/PROC-410-63