Abstract
Raman measurements of temperature reported earlier have been repeated using a doubled Nd: YAG pulse for excitation and an electronically delayed dye laser pulse. These results, together with a variety of experimental tests of the Raman method, confirm the validity of the small temperature rise during pulsed laser annealing. Transmission measurements spanning the visible and near IR show that there exists a thin (∼ 70 nm) layer at the surface in which the induced absorption coefficient is ∼ 7 × 105 cm−1.
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Compaan, A., Aydinli, A., Lee, M.C. et al. Raman and Optical Properties of the Pulsed Laser Annealing Phase of Si. MRS Online Proceedings Library 4, 43–48 (1981). https://doi.org/10.1557/PROC-4-43
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DOI: https://doi.org/10.1557/PROC-4-43