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Near-Infrared Emission from a Porous Silicon Device

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Abstract

Visible to near-infrared emission is produced from a porous silicon device under current injection. The porous silicon emitter is fabricated by selectively under-etching a p-n junction. The device is rectifying when biased across the junction, and exhibits a region of negative differential resistance (NDR) at the higher current levels. Bright red-orange emission is observed along the length of the junction in forward bias, but most of the light is emitted in the near-infrared with a peak near 1.3 μm at 30 mA. The intensity of the visible component has an exponential dependence on photon energy. The optical and electrical properties of this device are presented and possible mechanisms are discussed.

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Authors and Affiliations

  1. Electrical and Computer Engineering, University of California at Davis, Davis, CA, 95616, USA

    J. Penczek, A. Knoesen & R. L. Smith

  2. Lawrence Livermore National Laboratory, Livermore, CA, 94551, USA

    H. W. H. Lee

Authors
  1. J. Penczek
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  2. A. Knoesen
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  3. H. W. H. Lee
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  4. R. L. Smith
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Penczek, J., Knoesen, A., Lee, H.W.H. et al. Near-Infrared Emission from a Porous Silicon Device. MRS Online Proceedings Library 358, 641 (1994). https://doi.org/10.1557/PROC-358-641

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  • DOI: https://doi.org/10.1557/PROC-358-641

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