Abstract
The layer-by-layer amorphization process is explored in a temperature range in which the kinetics of crystallization can be neglected. It has been found that the pure amorphization rate increases exponentially as the substrate temperature is decreased with an apparent activation energy of 0.48 eV. Moreover the rate increases with both the ion flux and the energy deposited into elastic collisions. A phenomenological model is proposed to explain the experimental results.
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Battaglia, A., Romano, G. & Campisano, S.U. Layer by Layer Amorphization in Si: Temperature, Ion Mass and Flux Effects. MRS Online Proceedings Library 316, 253–258 (1993). https://doi.org/10.1557/PROC-316-253
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DOI: https://doi.org/10.1557/PROC-316-253