Abstract
InP layers were grown on semi-insulating InP wafer by molecular beam epitaxy (MBE) at low substrate temperatures (<200° C), using solid phosphorus source. We use x-ray diffraction, double crystal x-ray rocking curve, Auger electron spectroscopy, and temperature-dependent Van der Pauw and Hall effect measurements to characterize the as-grown and annealed InP layers. It is found that the InP layer is in poly-crystal state with excess P over 7 at%. The layers became single crystal after annealing above 400°C. The resistivity of the InP layer decreased from 60 Ωcm for an as-grown sample to 0.82 Ωcm after 400°C RTA annealing. The different role of excess P as compared to the role played by excess As in LT-GaAs is discussed based on the P properties.
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**e, K., Wie, C.R. & Wicks, G.W. InP Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperature. MRS Online Proceedings Library 241, 265–270 (1991). https://doi.org/10.1557/PROC-241-265
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DOI: https://doi.org/10.1557/PROC-241-265