Abstract
Optical properties of GaAs-Al0 5Ga0 5As multiple quantum wells affected by interface roughness have been investigated by timeresolved photoluminescence. The interface roughness affects on exciton dynamics is shown to be more complicated than those previously well studied line-width broadening of exciton transitions. A two-exponential decay of exciton luminescence and exciton peak shifting with increasing delay time have been observed. These observations have been successfully interpreted in terms of the interface roughness effects.
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Jiang, H.X., Zhou, P., Solin, S.A. et al. Interface Roughness of Quantum Wells Studied by Time-Resolved Photoluminescence. MRS Online Proceedings Library 148, 361–366 (1989). https://doi.org/10.1557/PROC-148-361
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DOI: https://doi.org/10.1557/PROC-148-361