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Time-Resolved Raman Scattering and Transmission Measurements During Pulsed Laser Annealing

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Abstract

Raman Scattering from a 7 nsec pulsed dye laser has been used to determine the onset of recrystallization following an 8 nsec dye laser excitation pulse in ion-implanted silicon. We find essentially complete recrystallization 59 nsec after the first excitation pulse and from Stokes-anti-Stokes ratios we find at 59 nsec a crystalline lattice temperature of 600 ± 200° C. Time-resolved transmission measurements at λ = 1.15 µm also demonstrate that no molten phase has occurred even though the usual reflectivity enhancement is observed.

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Authors and Affiliations

  1. Department of Physics, Kansas State University, Manhattan, Kansas, 66506, USA

    A. Compaan, H. W. Lo, A. Aydinli & M. C. Lee

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  1. A. Compaan
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  2. H. W. Lo
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  3. A. Aydinli
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  4. M. C. Lee
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Compaan, A., Lo, H.W., Aydinli, A. et al. Time-Resolved Raman Scattering and Transmission Measurements During Pulsed Laser Annealing. MRS Online Proceedings Library 1, 15 (1980). https://doi.org/10.1557/PROC-1-15

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  • DOI: https://doi.org/10.1557/PROC-1-15

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