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Time resolved ultrafast ARPES for the study of topological insulators: The case of Bi2Te3

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  • Semi-metals and the Topological Insulator
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Abstract

We discuss the application of time-resolved ultrafast angle resolved photoelectron spectroscopy to the study of photoexcited topological insulators. Measurements performed on the prototype material Bi2Te3 clearly show that all the main processes involved in the ultrafast surface carrier dynamics of topological insulators can be clearly observed and quantitatively analyzed. The comparison with other experimental results shows that the relative position of surface and bulk conduction bands with respect to the system Fermi level play an essential role in the recombination processes following ultrafast optical excitation.

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Authors and Affiliations

  1. Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, 91405, Orsay, France

    M. Hajlaoui, E. Papalazarou, J. Mauchain & M. Marsi

  2. School of Physics, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA

    Z. Jiang

  3. Department of Physics, Purdue University, West Lafayette, IN, 47907, USA

    I. Miotkowski & Y. P. Chen

  4. Synchrotron SOLEIL, Saint Aubin, BP. 48, 91192, Gif-sur-Yvette, France

    A. Taleb-Ibrahimi

  5. Laboratoire des Solides Irradiés, Ecole Polytechnique-CEA/DSM-CNRS UMR 7642, 91128, Palaiseau, France

    L. Perfetti

Authors
  1. M. Hajlaoui
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  2. E. Papalazarou
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  3. J. Mauchain
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  4. Z. Jiang
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  5. I. Miotkowski
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  6. Y. P. Chen
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  7. A. Taleb-Ibrahimi
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  8. L. Perfetti
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  9. M. Marsi
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Hajlaoui, M., Papalazarou, E., Mauchain, J. et al. Time resolved ultrafast ARPES for the study of topological insulators: The case of Bi2Te3 . Eur. Phys. J. Spec. Top. 222, 1271–1275 (2013). https://doi.org/10.1140/epjst/e2013-01921-1

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  • DOI: https://doi.org/10.1140/epjst/e2013-01921-1

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