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Impurity diffusion in a harmonic potential and nonhomogeneous temperature

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Abstract

We propose different ways of manipulating the dispersion of impurities along a semiconductor layer during heat treatment. The impurities undergo a random walk assisted by a nonlinear harmonic potential and nonhomogeneous temperature. Depending on the strength of a hot spot, trap potential, impurity density and standard deviation of the hot spot, the impurities diffuse away from the central region and pile up around the peripheral region of the semiconductor layer. Furthermore, the numerical result depicts that the internal field at high do** level can be of sufficient strength to cause the broadening of the impurity profile.

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Authors and Affiliations

  1. School of Chemistry and Physics, University of Kwazulu-Natal, Private Bag X01, 3209, Scottsville, Pietermaritzburg, South Africa

    Berhanu Aragie

  2. Department of Physics and Astronomy, California State University, Northridge, California, USA

    Mesfin Asfaw

  3. Department of Physics, Addis Ababa University, P.O. Box 1176, Addis Ababa, Ethiopia

    Lemi Demeyu & Mulugeta Bekele

Authors
  1. Berhanu Aragie
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  2. Mesfin Asfaw
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  3. Lemi Demeyu
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  4. Mulugeta Bekele
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Correspondence to Berhanu Aragie.

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Aragie, B., Asfaw, M., Demeyu, L. et al. Impurity diffusion in a harmonic potential and nonhomogeneous temperature. Eur. Phys. J. B 87, 214 (2014). https://doi.org/10.1140/epjb/e2014-50487-3

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  • DOI: https://doi.org/10.1140/epjb/e2014-50487-3

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