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Γ-X mixing in GaAs-Ga1-xAlxAs quantum wells under hydrostatic pressure

  • Solids and Liquids
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Abstract.

The mixing between the Γ and X conduction-band valleys in GaAs-Ga1-xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ-X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ-X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga1-xAlxAs quantum wells.

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Authors and Affiliations

  1. Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Morelos, Mexico

    M. E. Mora-Ramos

  2. Facultad de Educación, Universidad de Antioquia, AA, 1226, Medellín, Colombia

    S. Y. López

  3. Instituto de Física, Universidad de Antioquia, AA, 1226, Medellín, Colombia

    C. A. Duque

  4. Instituto de Física, UNICAMP, CP 6165, 13083-970, Campinas -, SP, Brazil

    C. A. Duque

Authors
  1. M. E. Mora-Ramos
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  2. S. Y. López
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  3. C. A. Duque
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Correspondence to C. A. Duque.

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Mora-Ramos, M., López, S. & Duque, C. Γ-X mixing in GaAs-Ga1-xAlxAs quantum wells under hydrostatic pressure. Eur. Phys. J. B 62, 257–261 (2008). https://doi.org/10.1140/epjb/e2008-00161-6

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  • DOI: https://doi.org/10.1140/epjb/e2008-00161-6

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