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Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial

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Abstract

epitaxial layers of AlxGa1–xAs1–y Sby with an aluminum content x ~ 60% and antimony content y ~ 3% were successfully grown by molecular-beam epitaxy at low temperature. A developed system of AsSb nanoinclusions was formed in the semiconductor matrix by subsequent annealing. The extended transparency window of the obtained metamaterial allows us to document the absorption of light near the interband absorption edge of the AlxGa1–xAs1–ySby semiconductor matrix. Parameters of the observed extinction band allow us to attribute the optical absorption to the plasmon resonance in the system of AsSb nanoinclusions.

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Funding

The study was supported by a grant from the Russian Science Foundation No. 22-22-20105 (https://rscf.ru/project/22-22-20105/) and a grant from the St. Petersburg Science Foundation in accordance with agreement No. 2022/25 dated April 14.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    L. A. Snigirev, V. I. Ushanov, A. A. Ivanov, N. A. Bert, D. A. Kirilenko, M. A. Yagovkina & V. V. Chaldyshev

  2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    V. V. Preobrazhenskii, M. A. Putyato & B. P. Semyagin

  3. St. Petersburg State University, St. Petersburg, Russia

    I. A. Kasatkin

Authors
  1. L. A. Snigirev
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  2. V. I. Ushanov
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  3. A. A. Ivanov
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  4. N. A. Bert
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  5. D. A. Kirilenko
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  6. M. A. Yagovkina
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  7. V. V. Preobrazhenskii
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  8. M. A. Putyato
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  9. B. P. Semyagin
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  10. I. A. Kasatkin
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  11. V. V. Chaldyshev
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Correspondence to V. V. Chaldyshev.

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Snigirev, L.A., Ushanov, V.I., Ivanov, A.A. et al. Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial. Semiconductors 57, 615–620 (2023). https://doi.org/10.1134/S1063782623050160

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  • DOI: https://doi.org/10.1134/S1063782623050160

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