Abstract—
Using the example of synthesized colloidal quantum dots (QDs) of certain semiconductors (CdSe, PbS, HgSe, InSb), the limiting sizes of nanocrystals with perfect structure during their synthesis are determined depending on the ratio of their volume and surface energies, which can vary from 6 nm for QD-InSb to 17 nm for QD-CdSe. The conductivity of single QDs in the interelectrode nanogap is single-electron, and the I–V characteristic has regions of electron tunneling through potential barriers, Coulomb current limitation, and resonant peaks of quantum conductivity. Dimensional relations are determined and nomograms of the relationship of the dimensional parameters are constructed to ensure the conditions for quantum conductivity. The assumption about terahertz current oscillations is substantiated.
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REFERENCES
S. B. Brichkin and V. F. Razumov, Russ. Chem. Rev. 85, 1297 (2016).
A. E. Zhukov, Lasers and Microlasers Based on Quantum Dots (Politekh-Press, St. Petersburg, 2019) [in Russian].
M. Alizadeh-Ghodsi, M. Pourhassan-Moghaddam, A. Zavari-Nematabad, B. Walker, N. Annabi, and A. Akbarzadeh, Part. Syst. Charact. 36, 1800302 (2019).
D. Porotnikov and M. Zamkov, J. Phys. Chem. C 124, 21895 (2020).
N. D. Zhukov, I. T. Yagudin, N. P. Aban’shin, and D. S. Mosiyash, Tech. Phys. Lett. 46, 1088 (2020).
M. V. Gavrikov, E. G. Glukhovskoi, and N. D. Zhukov, in Proceedings of the 12th International Conference on Micro and Nanotechnologies in Electronics (Nal’chik, Russia, 2021), p. 327. http://mnte.kbsu.ru/files/book2021.pdf.
V. P. Dragunov, I. G. Neizvestnyi, and V. A. Gridchin, Principles of Nanoelectronics (Logos, Moscow, 2006) [in Russian].
G. F. Glinskii, Tech. Phys. Lett. 44, 232 (2018).
F. A. Serrano and S. H. Dong, J. Quantum Chem. 113, 2282 (2013).
C. Gréboval, A. Chu, N. Goubet, C. Livache, and S. Ithurria, Chem. Rev. 121, 3627 (2021).
N. D. Zhukov, T. D. Smirnova, A. A. Khazanov, O. Yu. Tsvetkova, and S. N. Shtykov, Semiconductors 55 (12), 1203 (2021).
N. D. Zhukov, S. A. Sergeev, A. A. Khazanov, and I. T. Yagudin, Tech. Phys. Lett. 47 (22), 37 (2021).
D. V. Krylsky and N. D. Zhukov, Tech. Phys. Lett. 46, 901 (2020).
N. T. K. Thanh, N. Maclean, and S. Mahiddine, Chem. Rev. 114, 7610 (2014).
A. I. Rusanov, Surf. Sci. Rep. 58, 111 (2005).
D. Kashchiev, J. Chem. Phys. 120, 3749 (2004).
J. Wang, Ch. F. Mbah, T. Przybilla, et al., Nat. Commun. 9, 5259 (2018).
Z. Ou, Z. Wang, B. Luo, E. Luijten, and Q. Chen, Nat. Mater. 19, 450 (2020).
Y. Han, Nat. Mater. 19, 377 (2020).
M. Kristl and M. Drofenik, Ultrason. Sonochem. 15, 695 (2008).
M. N. Magomedov, Phys. Solid State 46, 954 (2004).
Yu. S. Barash, Van der Waals Forces (Nauka, Moscow, 1988) [in Russian].
N. V. Sibirev, M. A. Timofeeva, A. D. Bol’shakov, M. V. Nazarenko, and V. G. Dubrovskii, Phys. Solid State 52, 1531 (2010).
N. D. Zhukov, M. V. Gavrikov, V. F. Kabanov, and I. T. Yagudin, Semiconductors 55, 470 (2021).
N. D. Zhukov and M. V. Gavrikov, Mezhdun. Nauch.-Issled. Zh., No. 8 (110), 19 (2021).
R. A. Suris and I. A. Dmitriev, Phys. Usp. 46, 745 (2003).
N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko, V. Gel’khoff, V. K. Ivanov, and I. A. Shelykh, Semiconductors 36, 439 (2002).
N. D. Zhukov, O. Yu. Tsvetkova, M. V. Gavrikov, A. G. Rokakh, T. D. Smirnova, and S. N. Shtykov, Semiconductors 56 (4), 401 (2022).
S. A. Sergeev, M. V. Gavrikov, and N. D. Zhukov, Tech. Phys. Lett. (in press).
ACKNOWLEDGMENTS
We are grateful to O.Yu. Tsvetkova for fabrication of the quantum-dot samples.
Funding
The study was supported by the Russian Foundation for Basic Research, grant no. 20-07-00307.
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Translated by V. Bukhanov
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Zhukov, N.D., Gavrikov, M.V. & Shtykov, S.N. Dimensional Modeling of the Synthesis and Conductivity of Colloidal Quantum Dots. Semiconductors 56, 269–274 (2022). https://doi.org/10.1134/S1063782622040066
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DOI: https://doi.org/10.1134/S1063782622040066