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Effect of Neutron Irradiation on the Spectrum of Deep-Level Defects in GaAs Grown by Liquid-Phase Epitaxy in a Hydrogen and Argon Atmosphere

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Abstract

We present the results of experimental studies of the capacitance–voltage (C–V) characteristics and the spectra of deep-level transient spectroscopy (DLTS) of graded high-voltage p+–p0–i–n0 GaAs diodes fabricated by liquid-phase epitaxy at a crystallization-onset temperatures of 900°C from one solution melt due to self do** with background impurities, in a hydrogen or argon atmosphere, before and after irradiation with neutrons. After irradiation with neutrons, the DLTS spectra reveal wide defect-cluster regions with acceptor-like negatively charged traps of the n0-type layer, resulting from the emission of electrons from states located above the middle of the band gap. It is found that the differences in the C–V characteristics of the structures grown in a hydrogen or argon atmosphere are due to the different doses of irradiation of p+–p0–i–n0 GaAs structures and different degrees of compensation of shallow donor impurities by deep traps in the layers.

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  1. Ioffe Institute, 194021, St. Petersburg, Russia

    M. M. Sobolev & F. Yu. Soldatenkov

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  1. M. M. Sobolev
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  2. F. Yu. Soldatenkov
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Correspondence to M. M. Sobolev or F. Yu. Soldatenkov.

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Translated by V. Selikhanovich

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Sobolev, M.M., Soldatenkov, F.Y. Effect of Neutron Irradiation on the Spectrum of Deep-Level Defects in GaAs Grown by Liquid-Phase Epitaxy in a Hydrogen and Argon Atmosphere. Semiconductors 56, 107–114 (2022). https://doi.org/10.1134/S1063782622010158

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