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Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO2(Y) Films with Au Nanoparticles

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Abstract

The effect of optical illumination in the visible band on the resistive switching in ITO/ZrO2(Y)/n-Si metal—oxide—semiconductor (MOS) structures (including those with Au nanoparticles embedded in the ZrO2(Y) layer) is studied. It is found that the dependence of the logical gap between the resistance states on the photoexcitation intensity had a threshold nature. The logical gap decreases with further increasing photoexcitation intensity above the threshold. This effect is ascribed to the heating of active layers of the MOS structure due to interband optical absorption in the Si substrate. The suppression of resistive switching by photoexcitation at a wavelength of 650 nm (corresponding to plasmon resonance in Au nanoparticles) due to plasmon optical absorption in nanoparticles is observed.

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REFERENCES

  1. S. H. Lee, X. Zhu, and W. D. Lu, Nano Res. 13, 1228 (2020).

    Article  Google Scholar 

  2. J. Zhu, T. Zhang, Y. Yang, and R. Huang, Appl. Phys. Rev. 7, 011312 (2020).

    Article  ADS  Google Scholar 

  3. S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, and A. P. Kasatkin, Tech. Phys. Lett. 42, 536 (2016).

    Article  ADS  Google Scholar 

  4. A. Mehonic, T. Gerard, and A. J. Kenyon, Appl. Phys. Lett. 111, 233502 (2017).

    Article  ADS  Google Scholar 

  5. V. A. Volodin, G. N. Kamaev, and M. Vergnat, Phys. Status Solidi RRL, 2000165 (2020).

  6. V. A. Volodin, P. Geydt, G. N. Kamaev, A. A. Gisma-tulin, G. K. Krivyakin, I. P. Prosvirin, I. A. Azarov, Z. Fan, and M. Vergnat, Electronics 9, 2103 (2020).

    Article  Google Scholar 

  7. A. S. Novikov, D. O. Filatov, D. A. Antonov, I. N. Antonov, M. E. Shenina, and O. N. Gorshkov, J. Phys.: Conf. Ser. 993, 012026 (2018).

    Google Scholar 

  8. S. V. Tikhov, O. N. Gorshkov, D. A. Pavlov, I. N. Antonov, A. I. Bobrov, A. P. Kasatkin, M. N. Koryazhkina, and M. E. Shenina, Tech. Phys. Lett. 40, 369 (2014).

    Article  ADS  Google Scholar 

  9. O. Gorshkov, I. Antonov, D. Filatov, M. Shenina, A. Kasatkin, A. Bobrov, M. Koryazhkina, I. Korotaeva, and M. Kudryashov, Adv. Mater. Sci. Eng. 2017, 1759469 (2017).

    Article  Google Scholar 

  10. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Vol. 1.

    Google Scholar 

  11. T. S. Moss, J. Electron. Control 1, 126 (1955).

    Article  Google Scholar 

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Funding

This study was performed using equipment of the shared research facility of the Research and Education Center “Physics of Solid State Nanostructures” of Lobachevsky State University of Nizhny Novgorod.

This study was supported by the Ministry of Science and Higher Education of the Russian Federation (Project Part of the State Assignment no. 0729-2020-0058).

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Authors and Affiliations

  1. Lobachevsky State University, 603950, Nizhny Novgorod, Russia

    D. O. Filatov, M. E. Shenina, I. A. Rozhentsov, M. N. Koryazhkina, A. S. Novikov, I. N. Antonov, A. V. Ershov, A. P. Gorshkov & O. N. Gorshkov

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  1. D. O. Filatov
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  2. M. E. Shenina
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  3. I. A. Rozhentsov
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  4. M. N. Koryazhkina
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  5. A. S. Novikov
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  6. I. N. Antonov
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  7. A. V. Ershov
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  8. A. P. Gorshkov
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  9. O. N. Gorshkov
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Correspondence to D. O. Filatov.

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Translated by A. Kazantsev

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Filatov, D.O., Shenina, M.E., Rozhentsov, I.A. et al. Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO2(Y) Films with Au Nanoparticles. Semiconductors 55, 731–734 (2021). https://doi.org/10.1134/S1063782621090050

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  • DOI: https://doi.org/10.1134/S1063782621090050

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