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Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

The temperature dependence of the anisotropy of the magnetotransport properties of GaMnAs epitaxial layers featuring ferromagnetic order is investigated. The anisotropy of negative magnetoresistance that is unrelated to the presence of uniaxial anisotropy and the orientation of the hard magnetization axis is observed. This anisotropy may result from the occurrence of spatially oriented structures in GaMnAs that emerge in the bulk of the epitaxial layer during growth.

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Authors and Affiliations

  1. National University of Uzbekistan, 100176, Tashkent, Uzbekistan

    A. S. Gazizulina, A. A. Nasirov, A. A. Nebesniy & P. B. Parchinskiy

  2. Chungnam National University, 305-764, Taejon, Korea

    Do** Kim

Authors
  1. A. S. Gazizulina
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  2. A. A. Nasirov
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  3. A. A. Nebesniy
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  4. P. B. Parchinskiy
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  5. Do** Kim
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Correspondence to P. B. Parchinskiy.

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Translated by M. Skorikov

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Gazizulina, A.S., Nasirov, A.A., Nebesniy, A.A. et al. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers. Semiconductors 55, 214–218 (2021). https://doi.org/10.1134/S1063782621020123

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  • DOI: https://doi.org/10.1134/S1063782621020123

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