Abstract
Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.
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Original Russian Text © V.N. Trukhin, A.D. Bouravleuv, I.A. Mustafin, G.E. Cirlin, J.P. Kakko, H. Lipsanen, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 1, pp. 23–27.
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Trukhin, V.N., Bouravleuv, A.D., Mustafin, I.A. et al. Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires. Semiconductors 52, 19–23 (2018). https://doi.org/10.1134/S1063782618010244
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DOI: https://doi.org/10.1134/S1063782618010244