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Resonant features of the terahertz generation in semiconductor nanowires

  • XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
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Abstract

The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.

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Correspondence to V. N. Trukhin.

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Original Russian Text © V.N. Trukhin, A.D. Bouravleuv, I.A. Mustafin, G.E. Cirlin, D.I. Kuritsyn, V.V. Rumyantsev, S.V. Morosov, J.P. Kakko, T. Huhtio, H. Lipsanen, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 12, pp. 1587–1591.

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Trukhin, V.N., Bouravleuv, A.D., Mustafin, I.A. et al. Resonant features of the terahertz generation in semiconductor nanowires. Semiconductors 50, 1561–1565 (2016). https://doi.org/10.1134/S1063782616120241

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  • DOI: https://doi.org/10.1134/S1063782616120241

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