Abstract
The fabrication of ordered low-dimensional structures on clean and metal-atom-decorated stepped Si(557) and Si(556) surfaces is discussed. The formation conditions and atomic structure of regular step systems on clean Si(557) 7 × 7 and Si(556) 7 × 7 surfaces are studied. The atomic structure of stepped Si(hhm), Ag/Si(557), and Gd/Si(557) surfaces is studied using high-resolution scanning tunneling microscopy and low-energy electron diffraction. The possibility of fabricating 1D and 2D structures of gadolinium and silver atoms on the Si(557) surface is demonstrated.
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T. Suzuki, H. Minoda, Y. Tanishiro, K. Yagi, H. Kitada, and N. Shimizu, Surf. Sci. 357–358, 73 (1996).
A. Kirakosian, R. Bennewitz, J. N. Crain, Th. Fauster, J.-L. Lin, D. Y. Petrovykh, and F. J. Himpsel, Appl. Phys. Lett. 79, 1608 (2001).
M. Henzler and R. Zhachuk, Thin Solid Films 428, 129 (2003).
S. A. Teys, K. N. Romanyuk, R. A. Zhachuk, and B. Z. Olshanetsky, Surf. Sci. 600, 4878 (2006).
D.-H. Oh, M. K. Kim, J. H. Nam, I. Song, C.-Y. Park, S. H. Woo, H.-N. Hwang, C. C. Hwang, and J. R. Ahn, Phys. Rev. B 77, 155430 (2008).
A. A. Baski and L. J. Whitman, Phys. Rev. Lett. 74, 956 (1995).
A. N. Chaika, D. A. Fokin, S. I. Bozhko, A. M. Ionov, F. Debontridder, V. Dubost, T. Cren, and D. Roditchev, J. Appl. Phys. 105, 034304 (2009).
A. N. Chaika, D. A. Fokin, S. I. Bozhko, A. M. Ionov, F. Debontridder, T. Cren, and D. Roditchev, Surf. Sci. 603, 752 (2009).
A. N. Chaika, V. N. Semenov, V. G. Glebovskiy, and S. I. Bozhko, Appl. Phys. Lett. 95, 173107 (2009).
D. Sanchez-Portal and R. M. Martin, Surf. Sci. 532–535, 655 (2003).
R. Losio, K. N. Altmann, A. Kirakosian, J.-L. Lin, D. Y. Petrovykh, and F. J. Himpsel, Phys. Rev. Lett. 86, 4632 (2001).
M. Schock, C. Surgers, and H. V. Lohneysen, Thin Solid Film 428, 11 (2003).
H. Okino, R. Hobara, I. Matsuda, T. Kanagawa, S. Hasegawa, J. Okabayashi, S. Toyoda, M. Oshima, and K. Ono, Phys. Rev. B 70, 113404 (2004).
M. Krawiec, T. Kwapiński, and M. Jalochowski, Phys. Rev. B 73, 075415 (2006).
K. Takayanagi, Y. Tanishiro, and S. Takahashi, J. Vac. Sci. Technol. A 3, 1502 (1985).
A. V. Latyshev, A. L. Aseev, A. B. Krasilnikov, and S. I. Stenin, Surf. Sci. 213, 157 (1989).
A. V. Latyshev, A. B. Krasilnikov, and A. L. Aseev, Surf. Sci. 311, 395 (1994).
K. Yagi, H. Minoda, and M. Degawa, Surf. Sci. Rep. 43, 45 (2001).
Y.-N. Yang, E. S. Fu, and E. D. Williams, Surf. Sci. 356, 101 (1996).
V. I. Marchenko and A. Ya. Parshin, Sov. Phys. JETP 52, 129 (1980).
A. N. Chaika, N. N. Orlova, V. N. Semenov, E. Yu. Postnova, S. A. Krasnikov, M. G. Lazarev, S. V. Chekmazov, V. Yu. Aristov, V. G. Glebovsky, S. I. Bozhko, and I. V. Shvets, Sci. Rep. 4, 3742 (2014).
A. Kirakosian, J. L. McChesney, R. Bennewitz, J. N. Crain, J.-L. Lin, and F. J. Himpsel, Surf. Sci. Lett. 498, L109 (2002).
R. A. Zhachuk, S. A. Teys, A. E. Dolbak, and B. Z. Olshanetsky, Surf. Sci. 565, 37 (2004).
R. A. Zhachuk, S. A. Tais, and B. Z. Olshanetsky, JETP Lett. 79, 381 (2004).
R.-L. Vaara, M. Kuzmin, R. E. Perala, P. Laukkanen, and I. J. Vayrynen, Surf. Sci. 529, L229 (2003).
Vaara,_M. Kuzmin, P. Laukkanen, R. E. Perala, and I. J. Vayrynen, Appl. Surf. Sci. 220, 327 (2003).
M. Goshtasbi Rad, M. Gothelid, G. le Lay, and U. O. Karlsson, Surf. Sci. 558, 49 (2004).
C. Tegenkamp, T. Ohta, J. L. McChesney, H. Dil, E. Rotenberg, H. Pfnur, and K. Horn, Phys. Rev. Lett. 100, 076182 (2008).
I. Horcas, R. Fernandez, J. M. Gomez-Rodriguez, J. Colchero, J. Gomez-Herrero, and A. M. Baro, Rev. Sci. Instrum. 78, 013705 (2007).
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Original Russian Text © S.I. Bozhko, A.M. Ionov, A.N. Chaika, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 6, pp. 772–778.
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Bozhko, S.I., Ionov, A.M. & Chaika, A.N. Si(hhm) surfaces: Templates for develo** nanostructures. Semiconductors 49, 753–759 (2015). https://doi.org/10.1134/S106378261506007X
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DOI: https://doi.org/10.1134/S106378261506007X