Abstract
The results of X-ray absorption near-edge structure spectroscopy data obtained with synchrotron radiation for multilayered nanoperiodic Al2O3/SiO x /Al2O3/SiO x /.../Si(100) structures annealed at temperatures of 500–1100°C are reported. The data show that, upon high-temperature annealing (∼1100°C), the structures are modified. The modification is attributed to the formation of Si nanocrystals in deep layers of the structures. At the same time, the structures exhibit size-dependent high-intensity photoluminescence in the photon-energy range 1.4–1.52 eV.
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Original Russian Text © S.Yu. Turishchev, V.A. Terekhov, D.A. Koyuda, D.E. Spirin, E.V. Parinova, D.N. Nesterov, D.A. Grachev, I.A. Karabanova, A.V. Ershov, A.I. Mashin, E.P. Domashevskaya, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 3, pp. 421–425.
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Turishchev, S.Y., Terekhov, V.A., Koyuda, D.A. et al. Formation of Si nanocrystals in multilayered nanoperiodic Al2O3/SiO x /Al2O3/SiO x /.../Si(100) structures: Synchrotron and photoluminescence data. Semiconductors 49, 409–413 (2015). https://doi.org/10.1134/S1063782615030227
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DOI: https://doi.org/10.1134/S1063782615030227