Abstract
For a Schottky-diode structure containing two narrow GaAs (3.5 nm) and AlAs (5 nm) heterolayers, the photoluminescence properties of long-living dipolar excitons, indirect in both real and momentum space, are studied in perpendicular magnetic fields in the Faraday configuration of measurements. With an external perpendicular electric field, the lifetimes of such excitons can be extended to ∼1 μs. Nevertheless the exciton spin subsystem remains nonequilibrium: the exciton spin-relaxation time is even longer. The degree of circular polarization of the photoluminescence attains 80% in a field of 6 T. With an electric field, it is possible to control the degree and sign of the circular polarization.
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Original Russian Text © A.V. Gorbunov, V.B. Timofeev, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 1, pp. 47–52.
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Gorbunov, A.V., Timofeev, V.B. Dipolar excitons indirect in real and momentum space in a GaAs/AlAs heterostructure. Semiconductors 49, 44–49 (2015). https://doi.org/10.1134/S106378261501011X
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DOI: https://doi.org/10.1134/S106378261501011X