SpringerLink
Log in

Radiation Hardened Components of Semicustom Analog Microcircuits

  • Published:
Russian Microelectronics Aims and scope Submit manuscript

Abstract—

An MH2XA031 master slice array (basic matrix crystal (BMC)) is applied for designing and semicustom production of analog integrated circuits (ICs) operating in extreme conditions. It can be effectively used only with a clear understanding of the permissible ranges of changes in the parameters of analog components when exposed to various types of penetrating radiation. In this study, with the help of circuit simulation, the effect of neutron fluence up to 1014 neutrons/cm2 and the absorbed dose of gamma rays up to 3 Mrad on the static parameters of the components of the MH2XA031 circuit design library—an ADComp3 comparator, an OAmp2 low zero offset voltage operational amplifier, an OAmp8 multidifferential operational amplifier, and a charge-sensitive amplifier (CSA) with an input double-gate transistor—is studied. It is established that the ADComp3 comparator, the OAmp2 and OAmp8 amplifiers, and the CSA remain operational at an absorbed dose of gamma rays equal to 3 Mrad. The permissible neutron fluence values for ADComp3, OAmp8, and CSA are 1014 neutrons/cm2; and for OAmp2, 1013 neutrons/cm2. It is established that modeling the radiation changes in the parameters of the components at higher neutron fluences (more than 1014 neutrons/cm2) and the absorbed gamma quanta of more than 3 Mrad is advisable after experimental verification of the adequacy of the transistor models used at the specified levels of penetrating radiation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.
Fig. 8.
Fig. 9.
Fig. 10.
Fig. 11.

REFERENCES

  1. Dvornikov, O.V., Tchekhovsky, V.A., Prokopenko, N.N., Galkin, Y.D., Kunts, A.V., and Chumakov, V.E., Analog integrated circuits design for extreme environmental conditions on the base of master slice array MH2XA031, Probl. Razrab. Perspektivnykh Mikro- Nanoelektronnykh Sistem, 2021, no. 2, pp. 37–46. https://doi.org/10.31114/2078-7707-2021-2-37-46

  2. Dvornikov, O.V., Chekhovski, V.A., Dyatlov, V.L., Bogatyrev, Yu.V., and Lastovsky, S.B., Forecasting the resistance of bipolar microcircuits to various types of penetrating radiation, SVCh-tekhnika i telekommunikatsionnye tekhnologii. 23-ya Mezhdunarodnaya Krymskaya konferentsiya (UHF Equipment and Telecommunication Technologies: 23th Int. Crimean Conf.), Sevastopol, 2013, Moscow: Krym. Nauchn. Tekh. Tsentr im. Popova, 2015, vol. 2, pp. 925–927.

  3. Prokopenko, N.N., Dvornikov, O.V., and Bugakova, A.V., Proektirovanie nizkotemperaturnykh i radiatsionno-stoikikh analogovykh mikroskhem dlya obrabotki signalov datchikov: monografiya (Design of Low-Temperature and Radiation-Resistant Analog Microcircuits for Processing of Sensor Signals: Monograph), Moscow: SOLO-N-Press, 2021.

  4. Dvornikov, O.V., Tchekhovski, V.A., Prokopenko, N.N., Galkin Ya.D., and Kunts A.V., Taking into account the simultaneous effect of low temperatures and penetrating radiation on the characteristics of the bipolar and JFETs in circuit simulation, Probl. Razrab. Perspektivnykh Mikro- Nanoelektronnykh Sistem, 2020, no. 1, pp. 46–55. https://doi.org/10.31114/2078-7707-2020-1-46-55

  5. Close, J.P. and Counts, L.W., A 50-fA junction-isolated operational amplifier, IEEE J. Solid-State Circuits, 1988, vol. 23, no. 3, pp. 843–851. https://doi.org/10.1109/4.328

    Article  ADS  Google Scholar 

  6. Nanver, L.K. and Goudena, E.J.G., Design considerations for integrated high-frequency p-channel JFETs, IEEE Trans. Electron. Devices, 1988, vol. 35, no. 11, pp. 1924–1934. https://doi.org/10.1109/16.7406

    Article  ADS  Google Scholar 

  7. Dvornikov, O.V., Chekhovsky, V.A., Dzyatlau, V.L., Prokopenko, N.N., and Budyakov, P.S., Design of voltage comparators based on the elements of the radiation-hardened low-temperature BiJFET array chip MH2XA030, Probl. Razrab. Perspektivnykh Mikro- Nanoelektronnykh Sistem, 2018, no. 4, pp. 10–16. https://doi.org/10.31114/2078-7707-2018-4-10-16

  8. Dvornikov, V.L., Dziatlau, V.L., Tchekhovski, V.A., Prokopenko, N.N., and Bugakova, A.V., BiJFet array chip MH2XA030—A design tool for radiation-hardened and cryogenic analog integrated circuits, 2018 IEEE Int. Conf. on Electrical Engineering and Photonics (EExPolytech), St. Petersburg, 2018, IEEE, 2018, pp. 13–17. https://doi.org/10.1109/EExPolytech.2018.8564415

  9. Galkin, Ya.D., Dvornikov, O.V., Chekhovskii, V.A., and Prokopenko, N.N., Experimental studies and a double gate JFET model for analog integrated circuits, Dokl. Beloruss. Gos. Univ. Inf. Radioelekron., 2021, vol. 19, no. 7, pp. 5–12. https://doi.org/10.35596/1729-7648-2021-19-7-5-12

    Article  Google Scholar 

  10. Dvornikov, O.V., Tchekhovski, V.A., Dyatlov, V.L., Galkin, Y.D., and Prokopenko, N.N., Ionizing radiation influence on parameters of analog components of the master slice array MH2XA030, Dokl. Beloruss. Gos. Univ. Inf. Radioelekron., 2021, vol. 19, no. 4, pp. 52–60. https://doi.org/10.35596/1729-7648-2021-19-4-52-60

    Article  Google Scholar 

  11. Dvornikov, O.V., Tchekhovski, V.A., Prokopenko, N.N., and Pakhomov, I.V., Reducing noises of high-speed bi-JFET charge-sensitive amplifiers during schematic design, IOP Conf. Ser.: Mater. Sci. Eng., 2020, vol. 862, p. 022068. https://doi.org/10.1088/1757-899X/862/2/022068

Download references

Funding

This work was supported by the Russian Science Foundation, project no. 22-29-00637.

Author information

Authors and Affiliations

  1. JSC Minsk Scientific Research Instrument-Making Institute, 220113, Minsk, Belarus

    O. V. Dvornikov

  2. Belarusian State University, 220030, Minsk, Belarus

    V. A. Tchekhovsky, Ya. D. Galkin & A. V. Kunts

  3. Don State Technical University, 344002, Rostov-on-Don, Rostov Oblast, Russia

    N. N. Prokopenko & V. E. Chumakov

  4. Institute for Design Problems in Microelectronics, Russian Academy of Sciences, 124681, Zelenograd, Russia

    N. N. Prokopenko

  5. Belarusian State University of Informatics and Radioelectronics, 220013, Minsk, Belarus

    Ya. D. Galkin & A. V. Kunts

Authors
  1. O. V. Dvornikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. A. Tchekhovsky
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. N. Prokopenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Ya. D. Galkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. V. Kunts
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. V. E. Chumakov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. N. Prokopenko.

Ethics declarations

The authors declare that they have no conflicts of interest.

Additional information

Publisher’s Note.

Pleiades Publishing remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Dvornikov, O.V., Tchekhovsky, V.A., Prokopenko, N.N. et al. Radiation Hardened Components of Semicustom Analog Microcircuits. Russ Microelectron 52, 599–607 (2023). https://doi.org/10.1134/S1063739723070077

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063739723070077

Keywords:

Search

Navigation