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Features of the Formation of Ripple Structures on the Surface of Silicon under Irradiation with a Focused Gallium Ion Beam

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Abstract—

The processes of microrelief formation on the Si(100) surface under irradiation with a 30-keV Ga+-ion beam with doses of D = 6 × 1016–4 × 1018 cm–2 at incidence angles of θ = 0°–50° are studied. It is established that a ripple structure is formed in an angular range of θ = 25°–35° at D = 2 × 1017–2 × 1018 cm–2. However, a well reproducible ripple structure is observed at incidence angles of θ = 30° ± 2° starting from irradiation doses of 2 × 1017 cm–2. As D increases from 2 × 1017 to 2 × 1018 cm–2, the wavelength and the amplitude increase from ~150 to ~400 nm and from ~30 to ~70 nm, respectively. At D > 2 × 1018 cm–2, the ripple structure is destroyed. The features of the formation of such a Si surface relief using a Ga+-ion beam are a rather narrow angular range in which the relief is formed and the value of the irradiation dose at which its nucleation begins. The reasons for these features can be precipitates of implanted Ga in the Si surface layer and the angular dependences of the sputtering yield and composition of the Si surface layer irradiated with a Ga+ ion beam.

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Funding

The work was supported within the framework of a State Assignment of the Ministry of Education and Science no. FFNN-2022-0018 for the Yaroslavl branch of the Valiev Institute of Physics and Technology, Russian Academy of Sciences, using the equipment of Facilities Sharing Centre “Diagnostics of Micro- and Nanostructures”.

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Authors and Affiliations

  1. Valiev Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, 150007, Yaroslavl, Russia

    M. A. Smirnova, V. I. Bachurin, L. A. Mazaletsky, D. E. Pukhov, A. B. Churilov & A. S. Rudy

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  1. M. A. Smirnova
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  2. V. I. Bachurin
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  3. L. A. Mazaletsky
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  4. D. E. Pukhov
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  5. A. B. Churilov
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  6. A. S. Rudy
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Correspondence to V. I. Bachurin.

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Translated by L. Kulman

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Smirnova, M.A., Bachurin, V.I., Mazaletsky, L.A. et al. Features of the Formation of Ripple Structures on the Surface of Silicon under Irradiation with a Focused Gallium Ion Beam. J. Surf. Investig. 15 (Suppl 1), S150–S156 (2021). https://doi.org/10.1134/S1027451022020380

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