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Anomalous Hall effect in MnSi: Intrinsic to extrinsic crossover

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Abstract

Temperature dependences of low field Hall resistivity ρH are used to separate anomalous (ρ aH ) and normal (R H B) contributions to the Hall effect in chiral magnet MnSi (T c ≈ 29.1 K). It is found that the transition between paramagnetic (T > T c ) and magnetically ordered (T < T c ) phases is accompanied by the change in anomalous Hall resistivity from low temperature behavior governed by Berry phase effects (ρ aH = μ0 S 2ρ2 M, T < T c ) to high temperature regime dominated by skew scattering (ρ aH = μ0 S 1ρM, T > T c ). The crossover between the intrinsic (∼ρ2) and extrinsic (∼ρ) contributions to the anomalous Hall effect develops together with the noticeable increase in the concentration of charge carriers estimated from the normal Hall coefficient (from n/n Mn(T > T c ) ≈ 0.94 to n/n Mn(T < T c ) ≈ 1.5, n Mn ≈ 4.2 × 1022 cm−3). The observed features may correspond to the dramatic change in Fermi surface topology induced by the onset of long-range magnetic order in MnSi.

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Authors and Affiliations

  1. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, 119991, Russia

    V. V. Glushkov, I. I. Lobanova, V. Yu. Ivanov & S. V. Demishev

  2. Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow region, 141700, Russia

    V. V. Glushkov, I. I. Lobanova & S. V. Demishev

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  1. V. V. Glushkov
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  2. I. I. Lobanova
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  3. V. Yu. Ivanov
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  4. S. V. Demishev
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Correspondence to V. V. Glushkov.

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Glushkov, V.V., Lobanova, I.I., Ivanov, V.Y. et al. Anomalous Hall effect in MnSi: Intrinsic to extrinsic crossover. Jetp Lett. 101, 459–464 (2015). https://doi.org/10.1134/S0021364015070085

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