Abstract
In this paper, we implement the pulsed current–voltage (PIV) technique for the metal-oxide-semiconductor field-effect transistor (MOSFET) device’s ultrafast characterization based on the OpAmp amplifier OPA818. The latter dropped down the measurement time for a whole MOSFET characteristic to \({{t}_{M}}\) = 50 ns as an enhancement. Furthermore, a study concerning the technique’s dependency on measurement time (\({{t}_{M}}\)), channel length (\(L\)), and channel width (\(W\)) is accomplished. It is found that the distortion in the technique’s results, labeled as hysteresis, is inversely proportional to measurement time and it increases dramatically with very low values of \({{t}_{M}}\). Also, the results show that PIV could have a somehow direct proportionality to channel length, and it is justified by the gate/drain capacitance (\({{C}_{{{\text{gd}}}}}\)) effect. On the other hand, the technique shows no dependency on channel width at all. Moreover, as measurements limitations, the results couldn’t record drain currents less than \({{I}_{{{\text{ds}}}}}\) ≈ 10–7 A, this makes PIV limited to the study of threshold voltage degradation (\(\Delta {{V}_{{{\text{th}}}}}\)) only. However, this issue is well discussed and solutions have been proposed.
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Funding
This work was supported by Directorate General for Scientific Research and Technological Development/Ministry of High Education and Scientific Research of Algeria (DGRSDT/MESRS) under the National Funding of Research (FNR) contract No. 05-4/FCS/DMN/ CDTA/PT 19-21.
In addition, this research work would not have been possible without the contribution of semiconductor devices reliability (FCS) team members, Microelectronics and Nanotechnology Division of the Center for the Development of Advanced Technologies (CDTA), so they are gratefully acknowledged for their precious help and discussions. This work is also done in collaboration with the laboratory of signals and systems (LSS) team of the Institute of electrical and electronics engineering (IGEE ex: INELEC), many thanks for their counsels.
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Messaoud, D.E., Djezzar, B., Boubaaya, M. et al. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Pulsed Current-Voltage Characterization Technique: Design and Discussion. Instrum Exp Tech 66, 1085–1094 (2023). https://doi.org/10.1134/S0020441223050330
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DOI: https://doi.org/10.1134/S0020441223050330