Abstract
Quasi-two-dimensional (quasi-2D) perovskites have attracted extraordinary attention due to their superior semiconducting properties and have emerged as one of the most promising materials for next-generation light-emitting diodes (LEDs). The outstanding optical properties originate from their structural characteristics. In particular, the inherent quantum-well structure endows them with a large exciton binding energy due to the strong dielectric- and quantum-confinement effects; the corresponding energy transfer among different n-value species thus results in high photoluminescence quantum yields (PLQYs), particularly at low excitation intensities. The review herein presents an overview of the inherent properties of quasi-2D perovskite materials, the corresponding energy transfer and spectral tunability methodologies for thin films, as well as their application in high-performance LEDs. We then summarize the challenges and potential research directions towards develo** high-performance and stable quasi-2D PeLEDs. The review thus provides a systematic and timely summary for the community to deepen the understanding of quasi-2D perovskite materials and resulting LED devices.
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Introduction
Light-emitting diodes (LEDs) are changing the lighting and display industry and have obtained significant advances compared to traditional lighting sources. Traditional material LEDs, e.g., III–V semiconductor LEDs1,2, organic LEDs (OLEDs)3,4, and quantum-dot LEDs (QLEDs)5, have achieved great success and gradually realized commercialization but still face some challenges. OLEDs have low carrier transport capability and exciton recombination, which hinders the improvement of the brightness. In addition, QLEDs show challenges in terms of the tedious manufacturing process, and the reliance on hydrophobic insulating long ligands also hinders their stability and electrical conductivity. Compared with these traditional materials, metal halide perovskites (MHPs) exhibit superior optoelectronic features that are beneficial for LED applications, such as high photoluminescence quantum yields (PLQYs), narrow full width at half maximum (FWHM), and feasible spectral tunability6,7,8,9,10. Perovskite LEDs (PeLEDs) have achieved impressive progress in the past few years since the first room-temperature PeLED was reported in 201411. Three types of perovskite materials with different dimensions (i.e., 3D perovskites, quasi-2D perovskites, and perovskite nanocrystals) are commonly included in the emitter layer of PeLEDs12,13,14,15,16. 3D PeLEDs have achieved EQEs of more than 20% in both the near-infrared and green regimes17,18. Simultaneously, PeLEDs based on perovskite nanocrystals have also shown prosperous development since they were first reported by Song et al. in 201519,20,21, achieving a record EQE of 23.4%22. Accordingly, the rapid progress achieved in high-performance PeLEDs indicates their promising applications, particularly in ultrahigh-definition displays, solid-state lighting, and photo-communication areas23,24.
Quasi-2D perovskites represent an important category of perovskites that possess self-assembled multi-quantum-well structures and have gained great success in light emission applications owing to their outstanding optoelectrical properties25,26. Calabrese et al.27 demonstrated that MAPbI3 (n = ∞) perovskite and (RNH3)2PbI4 (n = 1) perovskite represent two typical materials in the series of (RNH3)2MAn−1PbnI3n+1 (n = 1 to ∞). Thereafter, they reported the first quasi-2D perovskite, PEA2MAPb2I7, and the obtained crystallography data unambiguously confirmed the “bilayer” structure. Another pioneering work carried out by Mitzi et al.28 highlighted the structural “layered” characteristic of Sn-based perovskites (C4H9NH3)2(CH3NH3)n−1SnnI3n+1 (n = 1–5) through crystallographic characterization. Recently, substantial efforts have been made to obtain high-performance quasi-2D PeLEDs, which have facilitated unprecedented rapid development. In the past five years, we have witnessed the rapid development of quasi-2D perovskite optoelectronics, especially their tremendous success in LED applications. The recorded EQE of LEDs has soared to 21% and approached the efficiency limit22,29 since the first example was reported in 201630.
In particular, quasi-2D perovskites exhibit unique optical properties arising from their structural characteristics, which are different from those of conventional 3D11,31,32,33 and two-dimensional (2D) perovskites34,35. First, quasi-2D perovskites possess natural quantum-well structures, which can induce both dielectric- and quantum-confinement effects36,37,38,39,40. Such strong confinements thus afford a large exciton binding energy (Eb). In addition, quasi-2D films feature a mixed-phase rather than a single phase because the formation energies for different quasi-2D phases are quite similar41. During photoexcitation, the photocarriers transfer from higher bandgap species to lower bandgap species rapidly and efficiently, leading to accumulated carriers in the recombination centers. The increased carrier density then effectively passivates the defect states, thereby significantly improving the radiative recombination efficiency and the resulting PLQYs30,42. In addition, quasi-2D perovskites exhibit tunability of their spectra, which can be modulated through composition and dimensionality engineering respectively. These characteristics enable continuous photoluminescence (PL) wavelength tuning from violet to near-infrared (NIR) spectral regions29,43,44,45.
However, the performance and stability of quasi-2D PeLEDs still cannot meet the requirements for commercialization at the moment. More efforts need to be devoted to exploring the optical and electrical properties of these materials. In addition, investigation of the correlation between the device performance and the underlying photophysics of the materials appears to be particularly important. Following this trend, we discuss the inherent optical properties and corresponding photophysics of quasi-2D perovskites at the beginning of the review. We then summarize the progress in spectral tunability of quasi-2D perovskites, mainly to realize high-performance pure-red and pure-blue emission. Next, we discuss the newly emerged device engineering approaches to produce high-performance quasi-2D PeLEDs. Finally, we summarize the key challenges in the field and propose several promising research opportunities to facilitate the development of highly stable and high-performance quasi-2D materials and devices. The review article thus paves the way for future quasi-2D PeLED manufacture.
Characteristics of quasi-2D perovskites
Structural characteristics
Employing bulky organic cations to substantially replace the traditional small cations breaks the original continuous 3D structure and generates a stable quasi-2D geometry. The geometry can be understood as slicing the 3D structure in planes along the <100> crystallographic directions46,47,48. As shown in Fig. 1a, large organic amines are introduced during crystal growth, which cannot enter the gap between [BX6]4− octahedrons, thus inhibiting the growth of [BX6]4− along out-of-plane directions49,50. The sheets of quasi-2D perovskite unit cells are periodic along the basal plane and are constrained in the perpendicular direction. Generally, quasi-2D perovskites possess the chemical formula A′2An−1BnX3n+1 (1 ≤ n ≤ ∞), where A′ refers to a large organic cation, including monoammonium cations (R-NH3+) and diammonium cations (+H3N-R-NH3+) (R represents an alkyl chain or aromatic ligand); A stands for a small monovalent cation, e.g., methylammonium (MA+ = CH3NH3+), formamidine (FA+ = CH(NH2)2+), or cesium (Cs+); B is a divalent metal cation such as lead (Pb2+) or tin (Sn2+); X represents a halide, e.g., chloride (Cl−), bromide (Br−) or iodide (I−); and n refers to the number of [BX6]4− octahedral units. In brief, A′ acts as an insulating layer to isolate the inorganic layers (the metal halide [BX6]4− octahedral units) linked together by corner-sharing halide anions, and A cations occupy voids within the framework30,42.
a (i) Schematic representation of a quasi-2D perovskite, which can be obtained by slicing the 3D perovskite along the <100> crystallographic direction. (ii) Schematic crystal structures of quasi-2D perovskites with different n-values. (iii) Electronic properties of quasi-2D perovskites, which are determined by the degree of quantum- and dielectric-confinement effects. b Eb and PL emission wavelength of quasi-2D perovskites as a function of n-value. Panel b is reprinted from ref. 51 with permission from Wiley
Quasi-2D perovskites consist of a series of alternately aligned inorganic and organic layers. Inorganic [BX6]4− octahedral sheets are sandwiched by two layers of large organic spacers with relatively low dielectric constants. Specifically, the inorganic [BX6]4− slabs act as quantum “wells”, while the organic cap** layers function as “barriers”. Thus, the “quantum-well” (QW) structures of a quasi-2D perovskite are formed naturally with an atomically sharp interface between “barriers” and “wells” (Fig. 1a). Due to the quantum- and dielectric-confinement effects arising from the QW structure, the Eb of a quasi-2D perovskite becomes larger than that of its 3D analog25,42. The carrier wave function is compressed in one direction due to the QW width limitation. Accordingly, the carrier movement is limited, which increases the resulting Eb and effective bandgap of quasi-2D perovskites. In particular, both electrons and holes are confined within the inorganic well; stronger binding energy facilitates the formation of stable excitons at room temperature, thereby increasing the radiative recombination efficiency. Furthermore, the confinement intensity is dependent on the thickness of the QWs, which provides additional flexibility to tune the corresponding bandgap and carrier recombination dynamics51 (Fig. 1b). The selection of barriers with different dielectric constants affects the Eb value, referred to as the “dielectric confinement” effect. Ishihara et al.52 noted that the large Eb (370 meV) was too large to be explained only by the quantum confinement effect. Therefore, the dielectric confinement effect was raised53. Kanatzidis et al. simulated a high-frequency dielectric constant (ε∞) profile for different n-values of the BA2MAn−1PbnI3n+1 (BA+ = CH3(CH2)3NH3+, MA+ = CH3NH3+) family54. They demonstrated an increasing ε∞ for inorganic slabs with increasing n-value. The dielectric confinement dominates at n = 1, weakens at n = 5, and completely disappears in the 3D perovskite (n = ∞). Therefore, the dielectric confinement in quasi-2D perovskites also accounts for the corresponding high Eb, and the dielectric confinement decreases as the n-value increases (Fig. 1b).
The robustness of the excitonic states at room temperature is the most prominent optical feature of quasi-2D perovskites, which originates from their large Eb. Fortunately, Eb can be regulated through composition and structure engineering. Basically, incorporating organic cations with different dielectric constants into the quasi-2D structure can significantly tune the dielectric confinement effect55,56. In addition, Eb can also be modulated due to confinement effects by varying the thickness of the QWs40. The large Eb and thus prominent excitonic luminescence are unique features of quasi-2D perovskites with application in LEDs.
Photophysical properties
Ishihara et al. successively grew quasi-2D single crystals with n = 1, 2, 3, and 427,28,52. Afterward, Kanatzidis et al. synthesized and structurally characterized the n = 5 (CH3(CH2)3NH3)2(CH3NH3)4Pb5I16 perovskite54. To date, the maximum n-value quasi-2D perovskite reported is the n = 7 (CH3(CH2)2NH3)2(CH3NH3)6Pb7I22 perovskite57. Significantly, the high-quality quasi-2D single-crystal confirms that the structure is thermodynamically stable, which lays the foundation for further optoelectronic applications. The carrier recombination dynamics of quasi-2D perovskite single crystals with various n-values were systematically studied to deeply understand the photophysical properties of quasi-2D perovskites.
The carrier recombination dynamics of quasi-2D perovskites can typically be described by the following Eq. (1)58,59:
Here, N represents the carrier density at delay time t; k1 refers to the monomolecular recombination constant; k2 is the bimolecular recombination constant, and k3 is the three-body Auger (nonradiative) recombination constant. Chen et al.60 studied the charge-carrier recombination in quasi-2D perovskite single crystals using transient reflection (TR) spectroscopy. TR kinetics at different excitation fluences were then globally fitted to obtain k1, k2, and k3 for different n-value PEA2MAn−1PbnI3n+1 crystals. They found that the existence of excitons and free carriers varied in quasi-2D perovskite single crystals with different n-values. The largest k1 was found in the n = 1 sample, which can be attributed to its large Eb, indicating that excitons were dominant in this species, while for the n = 4 sample, free carriers dominated; for the n = 2 and 3 samples, free carriers and excitons coexisted. Additionally, Delport et al.61 investigated the recombination dynamics in (C6H5C2H4NH3)2(CH3NH3)n−1PbnI3n+1 (n = 1, 2, 3, and 4) single crystals. They first studied the scaling law of PL0 (the PL intensity at t = 0 ns, at the instant of pulse excitation) with excitation fluence, which is a classical method used to analyze the recombination behavior. For the n = 1 2D single crystal, PL0 was linear with the excitation density, showing the predominant exciton recombination characteristic. However, for n > 1 single crystals, the nonlinear relationship between PL0 and the pump density proved the coexistence of free carrier and exciton recombination. The associated optical and electrical properties seemed to further diverge from those of the pure excitonic compound as the n-value increased. To conclude, in low n-value quasi-2D perovskites, Eb is large, which guarantees efficient exciton recombination. In high n-value species, the excitons tend to dissociate into free carriers as Eb decreases (Fig. 2b). The above carrier recombination dynamics in quasi-2D perovskite single crystals have established the potential use of quasi-2D perovskites as optoelectronic materials, such as in solar cells and LEDs.
a TA spectra at different timescales, b TA spectra at different wavelengths as a function of delay time, c PL spectra at distinct timescales, and d PL decay curve probed at selected wavelengths for <n> = 3 perovskites. Comparison of e initial time PL intensities and f PLQYs as a function of the photoinjected carrier density between 3D and quasi-2D perovskite films. Panels a–d are reprinted from ref. 30 with permission from Springer Nature. Panels e and f are reprinted from ref. 30 carried out ultrafast spectroscopy to investigate the carrier recombination kinetics for (PEA)2MAn−1PbnI3n+1 quasi-2D perovskite films. Intriguingly, the TA spectra exhibited four distinctive bleaching peaks in <n> = 3 (<n> represents the average “QW” thickness) films ascribed to n = 2, 3, 4, and 5 species. Figure 2a shows the relative intensity evolution of these bleaching peaks. The data demonstrated that carriers transfer from small n-value species to large n-value species. The build-up time for GSB of lower bandgap species was in good agreement with the fast decay time of higher bandgap species, which was less than 1 ps and indicated that the energy transfer was ultrafast (Fig. 2b). Time-resolved photoluminescence (TRPL) measurements revealed the same trend (Fig. 2c). Specifically, the lower bandgap species exhibited a biexponential decay, and the corresponding fast component was attributed to carrier funneling from large bandgap species (Fig. 2d).
**ng et al.62 investigated the power-dependent initial PL intensity (IPL [t = 0]) for (NMA)2FAn−1PbnI3n+1 quasi-2D perovskite films (Fig. 2e). Notably, IPL [t = 0] was linear with excitation density below 1.5 × 1016 cm−3, while a clear transition from linear to superlinear was observed when the excitation density increased continuously. They demonstrated that monomolecular radiative exciton recombination was dominant under a low carrier density and gradually changed to free electron-hole bimolecular recombination as the carrier density increased further. Consequently, the PLQY of a quasi-2D perovskite can be given by the following equation62:
Here, the monomolecular recombination constant k1 contains both k1,exciton and k1,trap, where k1,exciton is the radiative exciton recombination constant and k1,trap is the nonradiative trap-assisted recombination constant. The PLQY only depends on two physical processes, namely, radiative recombination (kr) and nonradiative recombination (knr), and is the result of competition between these two channels. Specifically, for quasi-2D perovskites, radiative recombination includes exciton recombination (k1,exciton) and free carrier recombination (k2); nonradiative recombination includes trap-assisted recombination (k1,trap) and Auger recombination (k3). In addition, these recombination rate constants (k1, k2, and k3) strongly depend on the carrier concentration (N). Therefore, the PLQY of quasi-2D perovskite films is dependent on N. At low N, PLQY only depends on the competition between k1,exciton and k1,trap. Fortunately, the high PLQY and near invariant dependence for quasi-2D perovskite films at carrier densities below 1016 cm3 validated that radiative exciton recombination overwhelmed trap-mediated nonradiative recombination70. For quasi-2D perovskite films, the n-value distribution affects their energy transfer and corresponding radiative exciton recombination efficiency. Fortunately, the n-value distribution can be modulated through fabrication process engineering71,108. Previous reports demonstrated that introducing Rb+ (RRb+ = 1.52 Å) into a perovskite resulted in a significant increase in the bandgap due to the tilt of the inorganic octahedron and the reduction in orbital overlap109. The bandgap of RbxCs1−xPbBr3 perovskite films increased from 2.31 to 2.60 eV (0 ≤ x ≤ 0.8) with increasing Rb+. Jiang et al.110 partially substituted Cs+ with Rb+ and fabricated alloy PEA2(RbxCs1−x)2Pb3Br10 films. The small-radius Rb+ increased the optical bandgap of these films and realized blue emission within the range of ~450–490 nm (Fig. 6d). Moreover, alloy PEA2(RbxCs1−x)2Pb3Br10 films exhibited impressive spectral stability compared with the mixed-halide films since the undesired halide migration or Ostwald ripening had been overcome. Recently, Chu et al. used EA+ (CH3CH2NH3+) to partially replace Cs+ and achieved pure-blue emission in PEA2(EAxCs1−xPbBr3)2PbBr4 perovskite. They claimed that the incorporation of EA+ could decrease the Pb-Br orbital coupling and increase the bandgap (Fig. 6e). This strategy modulated the PL peak from the green region (508 nm) to the blue region (466 nm) with increasing EA+ (Fig. 6f), and over 70% PLQY in blue emission was obtained45. Lanzetta et al.111 reported the 2D perovskite materials (PEA)2SnIxBr4−x with tunable optical properties in the visible spectral region. Limited to the manufacturing technology at that time, they only fabricated PeLEDs with extremely poor performance at 630 nm. Subsequently, Yuan et al.112 developed a strategy to improve the film quality and protect Sn2+ from oxidation by adding valeric acid (VA). They fabricated color-pure red PEA2SnI4 LEDs with an EQE of 5% and a lifetime of >15 h.
In conclusion, cation engineering of the “A-site” or “B-site” is another feasible strategy to achieve pure red and blue emission. This strategy dramatically slows down the spectral redshift caused by halogen segregation, thus showing excellent application potential in long-term stable quasi-2D PeLEDs. The “A-site” and “B-site” options are still limited, and researchers should exploit more suitable inorganic or organic cations to provide further breakthroughs.
Dimensionality engineering
Quasi-2D perovskites with high structural tunability can enable flexible regulation of the quantum-confinement effect. Reducing the average <n> value of the film enhances the quantum-confinement effect, broadens the perovskite bandgap, and results in spectral blueshift. Thus, dimensionality engineering offers an efficient approach for spectral manipulation86,97. The average <n> values of quasi-2D perovskite films are determined by the equilibrium between the large organic cations and the precursor88. In theory, increasing the content of large organic cations can monotonically reduce the <n> value of quasi-2D perovskite films. However, this does not mean that quasi-2D perovskite films with low <n> values are sufficient to effectively realize pure red or blue emission. For instance, increasing the content of large organic cations results in excessive generation of a low n-value phase, which leads to inefficient energy transfer and reduced optical properties113. Meanwhile, poor charge transport properties arise from large amounts of insulating organic cations. Moreover, the strong electron–phonon coupling and exciton–exciton annihilation at small <n> values act as nonradiative recombination pathways and further deteriorate the optical properties114.
Judicious phase modulations towards a narrow phase distribution are highly desired to realize pure red and blue emission, which would address the severe optical property degradation in small <n> value films44,115,116,117,118,119,120. Controlling crystallization by antisolvent techniques or rational large cation spacers and additives can narrow the phase distribution72,115. **ng et al. selected the short organic cation isopropylammonium (IPA+) to partially replace the longer cation (PEA+) in PEA2A1.5Pb2.5Br8.5 (A = MA+ and Cs+) films, which can modulate the crystallization and phase distribution in the quasi-2D perovskite. Theoretical calculations showed that the formation energy of the n = 1 phase changed from −7.2 (more stable) to −6.5 eV (less stable) when these two cations were used synergistically (Fig. 7a). Thus, increasing the IPA+/Pb2+ ratio suppressed the formation of the n = 1 phase and inhibited high-n phase generation afterward, while the intermediate n phases (n = 2, 3, 4) grew faster instead (Fig. 7b). Simultaneously, the PL peaks blueshifted from 497 to 467 nm as the IPA+/Pb2+ ratio increased from 10 to 60%121. As a result, the resultant films displayed high PLQYs and stable blue emission by modulating the phase judiciously, thereby fabricating efficient and spectrally stable sky-blue quasi-2D PeLEDs. Since then, the effect of mixed organic cations on the properties of quasi-2D perovskites has been extensively studied.
a Calculated formation energy of PEABr- and IPABr-based perovskites and their mixed quasi-2D perovskites with different n-values. Inset: Atomic model of the PEA/IPA mixed quasi-2D perovskite with n = 3. b UV-vis absorption spectra of the perovskite PEA2A1.5Pb2.5Br8.5 with different amounts of IPABr additive. c Schematic diagram of the chelating effect on PbBr2 binding to the surface. d DFT-calculated destabilization energy of PbBr2 on the quasi-2D perovskite surface when coordinated with GABA and PEA. TA spectra at different timescales for e (PEA)2Cs2Pb3Br10 and f GABA-treated (PEA)2Cs2Pb3Br10 perovskite films. Panels a and b are reprinted from ref. 121 with permission from Springer Nature. Panels c–f are reprinted from ref. 122 with permission from Springer Nature
In addition to mixed-cation strategies, a judicious phase distribution can be achieved by rationally screening additives. Wang et al.122 incorporated a chelating agent, γ-aminobutyric acid (GABA), into a PEA2Csn−1PbnBr3n+1 film. Theoretical calculations indicated that the coordination tendency of small chelating molecules towards PbBr2 in the vicinity of the perovskite could inhibit the binding of PbBr2 to the perovskite surface, suppressing the growth of the large n phase. Replacing the unidentate group (PEA+) with a small bidentate molecule (GABA) resulted in a 10-fold increase in the destabilization energy (0.51 eV), which increased further when two GABA molecules were utilized for coordination (Fig. 7c, d). The photoexcited carrier dynamics of the GABA-treated quasi-2D perovskite films adequately proved that the resulting phase distribution was concentrated at n = 2 and 3 (Fig. 7e, f). The efficient energy transfer from the judicious phase distribution of the films can increase the PLQY and realize true-blue emission (EL at 478 nm)122. In conclusion, after a series of artificial designs and interventions regarding the phase distribution, the optical properties of pure red and blue quasi-2D perovskite films have significantly improved, paving the way for high-performance pure red and blue quasi-2D PeLED manufacture. In our opinion, successful fabrication of high-performance quasi-2D PeLEDs with pure red and blue emission that satisfy display purposes might require a combination of strategies leveraging anion engineering, cation engineering of the “A-site” or “B-site,” and dimensionality engineering.
High-performance quasi-2D PeLEDs
Highly emissive perovskite layers are not sufficient to obtain high-performance quasi-2D PeLEDs due to the difference between photoluminescence and electroluminescence. The working principle and important parameters of PeLEDs need to be specifically considered. PeLEDs can be simplified into a double-heterojunction structure, in which the perovskite emitter layer is sandwiched between the p-type hole transport layer (HTL) and the n-type electron transport layer (ETL)123. Under a forward voltage, holes and electrons are injected from the anode and cathode, respectively, and are confined in the perovskite layer. Then, the holes and electrons release photons through radiative recombination. The key parameters, including the EL peak, FWHM, luminance, turn-on voltage (Von), EQE, and operational stability, are used to evaluate the performance of PeLEDs124 (Table 1). For display devices with a wide color gamut, LEDs usually need to have a specific EL peak and a narrow FWHM to achieve emission purity, while in the case of white-light devices for solid-state lighting, the devices have a wide emission range and FWHM. The luminances of LEDs are usually between 200 and 1000 cd m−2 for display applications and exceed 10,000 cd m−2 for solid-state lighting125. Von refers to the voltage when the luminance of the device reaches 1 cd m−2. A low Von represents an effective injection of carriers. The operational stability of PeLEDs is usually evaluated by T50, which represents the time for the luminance to drop to half of its initial value when working at a fixed current or voltage.
EQE is defined as the ratio of the number of photons emitted by the device to the number of electrons injected and is the most important indicator for judging the energy conversion efficiency of LEDs. EQE can be expressed as the product of the internal quantum efficiency (IQE) and light extraction efficiency (ηoc)126.
Here, IQE is defined as the ratio of the number of photons generated to the number of electrons injected into the LED; ηoc represents the ratio of the number of photons emitted to the outside to the number of photons generated in the active layer; γ represents the charge injection balance factor; χ refers to the fraction of excitons for radiative decay, and ηPL is the PLQY127. ηPL has been detailed before, and ηoc will be elaborated below. Here, we focus on γ and χ, which relate to the device structure and electrical factors. Device engineering, such as optimization of the charge transport layers of quasi-2D PeLEDs, could promote the charge injection balance factor towards its maximum (γ = 1)128. In addition, the use of electron- and hole-blocking layers can confine the charge carriers in the emitting layer and thus lead to enhanced charge balance. The use of interfacial engineering to reduce the exciton quenching at each interface of the device could promote the fraction of excitons for radiative decay (χ)129. Based on Eq. (3), we summarize three aspects to improve the electrical properties in quasi-2D PeLEDs, including function layer modulation, interfacial engineering, and light out-coupling technologies. Finally, the operational stability is another critical parameter of quasi-2D PeLEDs, and we then overview several possible reasons for degradation130.
Functional layer optimization
To convert high PLQYs of quasi-2D perovskite films into high EQEs of quasi-2D PeLEDs, the band alignment of the device structure is the most basic consideration. Typically, PeLEDs have a sandwich device structure in which the perovskite emissive layer is located between the electron and hole transport layers. Ideally, the charge balance factor can be maximized to 1 (γ = 1) by optimizing the charge transport layer. The energy levels for different transport layer materials (TLMs), including HTLs and ETLs, are shown in Fig. 8a. Appropriate TLMs should have ideal energy levels for efficient carrier transport while blocking opposite carrier transport. In addition, the carrier mobility of different TLMs also affects the carrier injection balance. For ETLs, PO-T2T (2,4,6-tris[3-(diphenylphosphinyl) phenyl]-1,3,5-triazine) can enable overall performance improvements compared to B3PYMPM (4,6-bis(3,5-di(pyridin-3-yl) phenyl)-2-methylpyrimidine) and TPBi (2,2′,2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidalzole))131. The deeper HOMO level (−7.5 eV) and the superior electron mobility (∼10−3 cm2 V−1 s−1) account for the excellent electron transport and hole-blocking properties of PO-T2T. For HTLs, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) is commonly used, and its work function is ∼5.2 eV132. Notably, in terms of hole injection, a large barrier exists between PEDOT:PSS and the perovskite layer with a deeper valence band, especially in green and blue emitters. Fortunately, this predicament can be overcome by employing poly(sodium 4-styrenesulfonate) (PSS-Na) to increase the work function of PEDOT:PSS45,81,133. PEDOT:PSS doped with perfluorinated ionomer (PFI) can also achieve similar effects79,104. 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Acknowledgements
We acknowledge financial support from the National Natural Science Foundation of China (Nos. 21771114, 91956130) and the Natural Science Foundation of Tian** (18YFZCGX00580). M. Yuan acknowledges financial support from Distinguished Young Scholars of Tian** (No. 19JCJQJC62000).
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Zhang, L., Sun, C., He, T. et al. High-performance quasi-2D perovskite light-emitting diodes: from materials to devices. Light Sci Appl 10, 61 (2021). https://doi.org/10.1038/s41377-021-00501-0
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DOI: https://doi.org/10.1038/s41377-021-00501-0
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