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Full β-Ga2O3 films-based p-n homojunction

全氧化镓薄膜同质p-n结

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Abstract

Fabricating the p-n junction and exploring the device physics play key roles in develo** various functional devices and promoting their practical applications. Although ultrawide bandgap semiconductors have great potentials to fabricate high-voltage and high-efficiency power devices, the lack of p-type Ga2O3 poses a fundamental obstacle for fabricating the Ga2O3 p-n homojunction and impedes the development of full Ga2O3-based bipolar devices. In this study, n-type Sn-doped β-Ga2O3/p-type N-doped β-Ga2O3 films are prepared by a novel phase-transition growth technique combined with sputter deposition. Full β-Ga2O3 one-sided abrupt p-n homojunction diodes are fabricated and the device physics are explored in detail. The diodes possess a high rectification ratio of 4 × 104, a low specific on-resistance of 9.18 mΩ cm2 at 40 V, a built-in potential of 4.41 V, and an ideal factor of 1.78, and also show a good rectification behavior under alternating voltage with no overshoot and longterm stability. Our results clear away the major obstacle to β-Ga2O3 p-n homojunction, lay the foundation for β-Ga2O3 homogeneous bipolar devices, and pave the way for the evolution of high-voltage and high-power device applications.

摘要

制备p-n结以及探索其物理机制在发展各种功能器件和推进其 实际应用中起到关键作用. 超宽禁带半导体在制备高压高频器件上有 着巨大的潜力, 但是氧化镓p型掺杂困难限制了氧化镓同质p-n结的制 备, 进而阻碍了全氧化镓基双极型器件的发展. 本文通过一种先进的相 转变生长技术结合溅射镀膜的方法, 成功制备了n型锡掺杂β相氧化镓/p型氮掺杂β相氧化镓薄膜. 本工作成功制作了全氧化镓单边突变同质 p-n结二极管, 并且详细分析了器件机理. 该二极管实现了4 × 104 的整 流比、在40 V下9.18 mΩ cm2 的低导通电阻、4.41 V的内建电势和1.78 的理想因子, 并在交流电压下表现出没有过冲的整流特性以及长期稳 定性. 本工作为氧化镓同质p-n结初窥门径, 为氧化镓同质双极型器件 奠定了基础, 为高压高功率器件的应用开创了道路.

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Acknowledgements

This work was supported by the National Key R&D Program of China (2022YFB3605500 and 2022YFB3605503), the National Natural Science Foundation of China (62074039 and 12004074), China Postdoctoral Science Foundation (2020M681141), and the National Postdoctoral Program for Innovative Talents (BX20190070).

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Authors and Affiliations

  1. Academy for Engineering and Technology, and School of Information Science and Technology, Fudan University, Shanghai, 200433, China

    Hongchao Zhai  (翟泓超), Chenxing Liu  (刘晨星), Zhengyuan Wu  (吴征远), Congcong Ma  (马聪聪), Pengfei Tian  (田朋飞), **g Wan  (万景) & Zhilai Fang  (方志来)

  2. Institute of Optoelectronics, Fudan University, Shanghai, 200433, China

    Zhengyuan Wu  (吴征远), Junhao Chu  (褚君浩) & Zhilai Fang  (方志来)

  3. Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, **amen University, **amen, 361005, China

    Junyong Kang  (康俊勇)

Authors
  1. Hongchao Zhai  (翟泓超)
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  2. Chenxing Liu  (刘晨星)
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  3. Zhengyuan Wu  (吴征远)
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  8. Junhao Chu  (褚君浩)
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  9. Zhilai Fang  (方志来)
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Contributions

Author contributions Fang Z conceived the idea. Fang Z, Zhai H and Wu Z designed the experiments. Zhai H and Liu C carried out the material synthesis and characterized the β-Ga2O3 p-n homojunction. Ma C, Zhai H, Fang Z and Wu Z contributed to the theoretical calculations. Zhai H and Fang Z drafted the manuscript. Fang Z, Zhai H, Liu C, Wu Z, Ma C, Tian P, Wan J, Kang J and Chu J revised and proofread the manuscript.

Corresponding author

Correspondence to Zhilai Fang  (方志来).

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Conflict of interest The authors declare that they have no conflict of interest.

Additional information

Supplementary information Supporting data are available in the online version of the paper.

Hongchao Zhai received his Bachelor’s degree in electrical engineering and automation from Fudan University and now is pursuing his PhD degree in physical electronics at Fudan University. His current research focuses on the β-Ga2O3 devices, including p-n junctions and gas sensors.

Zhilai Fang received his PhD degree from the Chinese University of Hong Kong and worked as a postdoctoral researcher at Humboldt University of Berlin. He is currently a professor at the School of Information Science and Technology, Fudan University. His current research focuses on the β-Ga2O3-based materials and devices.

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Zhai, H., Liu, C., Wu, Z. et al. Full β-Ga2O3 films-based p-n homojunction. Sci. China Mater. 67, 898–905 (2024). https://doi.org/10.1007/s40843-023-2741-4

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