Abstract
The process of chemical–mechanical polishing (CMP) and chemical–dynamic polishing (CDP) of the PbTe and Pb1-xSnxTe crystal surfaces with the solutions based on (NH4)2Cr2O7 + HBr was investigated. The dependences of CMP rate on the dilution of the basic polishing etchant (NH4)2Cr2O7 + HBr + ethylene glycol with ethylene glycol (EG) or glycerin (Gl) were constructed. The quality of the polished surface was evaluated by electron microscopy, metallography and atomic force microscopy (AFM). Using energy-dispersive X-ray spectroscopy, it was found that the surfaces of the plates after polishing with the studied etchants do not contain Br, Cr, Cl and Na (they are part of the solutions for etching and rinse samples), and the ratio of host elements [Pb and Te] is close to stoichiometric.
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Malanych, G., Tomashyk, V., Korchovyi, A. et al. Mechanical and chemical treatments of PbTe and Pb1-xSnxTe single crystals by (NH4)2Cr2O7 + HBr + ethylene glycol etchants. Appl Nanosci 13, 5165–5170 (2023). https://doi.org/10.1007/s13204-022-02719-9
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DOI: https://doi.org/10.1007/s13204-022-02719-9