Abstract
A high-quality ZnGeP2 (ZGP) single crystal with large size of Φ30 mm × 80 mm was grown by a modified vertical Bridgman method. ZGP wafers were annealed with ZGP polycrystalline powder for 300 h at 550, 600 and 650 °C, respectively. The as-grown and annealed crystals were characterized by X-ray diffraction (XRD) analysis, Fourier transform infrared spectroscopy (FTIR), IR microscope and energy-dispersive spectroscopy (EDS). Results show that the quality of all wafers is improved evidently after annealing and the optimum annealing temperature obtained is 600 °C. The IR transmittance of the wafer measured by FTIR is up to 56.78 % at wavelength of 2.0 μm nearby and exceeds 59.00 % in the wavelength range of 3.0–8.0 μm. The deviations from stoichiometry decrease, and the homogeneity of the crystal is also improved after annealing. In this paper, scanning infrared map was proposed as a new nondestructive method to evaluate optical quality and homogeneity of crystal through comparing the IR transmittance with the three-dimensional IR spectral contour map.
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12598-015-0667-2/MediaObjects/12598_2015_667_Fig1_HTML.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12598-015-0667-2/MediaObjects/12598_2015_667_Fig2_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12598-015-0667-2/MediaObjects/12598_2015_667_Fig3_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12598-015-0667-2/MediaObjects/12598_2015_667_Fig4_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12598-015-0667-2/MediaObjects/12598_2015_667_Fig5_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12598-015-0667-2/MediaObjects/12598_2015_667_Fig6_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12598-015-0667-2/MediaObjects/12598_2015_667_Fig7_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12598-015-0667-2/MediaObjects/12598_2015_667_Fig8_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12598-015-0667-2/MediaObjects/12598_2015_667_Fig9_HTML.gif)
Similar content being viewed by others
References
Boyd GD, Buehler E, Storz FG. Linear and nonlinear optical properties of ZnGeP2 and CdSe. Appl Phys Lett. 1971;18(7):301.
Verozubova GA, Gribenyukov AI. Growth of ZnGeP2 crystals from melt. Crystallogr Rep. 2008;53(1):158.
Verozubova GA, Okunev AO, Gribenyukov AI, Trofimiv AY, Trukhanov EM, Kolesnikov AV. Growth and defect structure of ZnGeP2 crystals. J Cryst Growth. 2010;312(8):1122.
Vodopyanov KL, Schunemann PG. Broadly tunable noncritically phase-matched ZnGeP2 optical parametric oscillator with a 2-μJ pump threshold. Opt Lett. 2003;28(6):441.
Verozubova GA, Trofimov AY, Trukhanov EM, Kolesnikov AV, Okunev AO, Ivanov YF, Galtier PRJ, Said Hassani SA. Melt nonstoichiometry and defect structure of ZnGeP2 crystals. Crystallogr Rep. 2010;55(1):65.
Setzler SD, Giles NC, Halliburton LE, Schunemann PG, Pollak TM. Electron paramagnetic resonance of a cation antisite defect in ZnGeP2. Appl Phys Lett. 1999;74(9):1218.
Giles NC, Bai L, Chirila MM, Garces NY, Stevens KT, Schunemann PG, Setzler SD, Pollak TM. Infrared absorption bands associated with native defects in ZnGeP2. J Appl Phys. 2003;93(11):8975.
Brudnyi VN, Budnitskii DL, Krivov MA, Masagutova RV, Prochukhan VD, Rud YV. The electrical and optical properties of 2.0 MeV electron-irradiated ZnGeP2. Physica Status Solidi. 1978;50(2):379.
Halliburton LE, Edwards GJ, Scripsick MP, Rakowsky MH, Schunemann PG, Pollak TM. Electron-nuclear double resonance of the zinc vacancy in ZnGeP2. Appl Phys Lett. 1995;66(20):2670.
Setzler SD, Schunemann PG, Pollak TM, Ohmer MC, Goldstein JT, Hopkins FK, Stevens KT, Halliburton LE, Giles NC. Characterization of defect-related optical absorption in ZnGeP2. J Appl Phys. 1999;86(12):6677.
Zapol P, Pandey R, Ohmer M, Gale J. Atomistic calculations of defects in ZnGeP2. J Appl Phys. 1996;79(2):671.
Gehlhoff W, Azamat D, Hoffmann A. EPR studies of native and impurity-related defects in II-IV-V2 semiconductors. Mat Sci Semicon Proc. 2003;6(5–6):379.
Voevodin Valeriy G. Annealing of some II-IV-V2 crystals in the vapor of volatile constituents. Mat Res Soc Symp Proc. 2002;692(10):1557.
Fan Q, Zhu SF, Zhao BJ, Chen BJ, He ZY, Cheng J, Xu T. Influence of annealing on optical and electrical properties of ZnGeP2 single crystals. J Cryst Growth. 2011;318(1):725.
Zhao X, Zhu SF, Zhao BJ, Chen BJ, He ZY, Wang RL, Yang HG, Sun YQ, Cheng J. Growth and characterization of ZnGeP2 single crystals by the modified Bridgman method. J Cryst Growth. 2008;311(1):190.
Gao JH, Li S, Song LM, Li J, Wan Y. Growth of single crystal K3Y3(BO3)4 with low-symmetry structure and multi-type of substitutional sites. Rare Met. 2015;34(6):421.
Huang W, Zhao BJ, Zhu SF, He ZY, Chen BJ, Tang JJ, Liu WJ. Growth and characterizations of CdGeAs2 single crystal by descending crucible with rotation method. Rare Met. 2014;33(2):210.
Cheng J, Zhu SF, Zhao BJ, Chen BJ, He ZY, Fan Q, Xu T. Synthesis and growth of ZnGeP2 crystals: prevention of non-stoichiometry. J Cryst Growth. 2013;362:125.
Ghosh G. Sellmeier coefficients for the birefringence and refractive indices of ZnGeP2 nonlinear crystal at different temperatures. Appl Optics. 1998;37(7):1205.
Cao XL, Zhu SF, Zhao BJ, Chen BJ, He ZY, Wang ZC, Yang DH, Zhang JQ. Study of intermediates in the synthesis process of ZnGeP2. J Synth Cryst. 2013;04:558.
Acknowledgments
This study was financially supported by the National Natural Science Foundation Key Programs of China (No. 50732005) and the National High Technology Research and Development Program of China (No. 2007AA03Z443).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Cao, LQ., Zhao, BJ., Zhu, SF. et al. Annealing and optical homogeneity of large ZnGeP2 single crystal. Rare Met. 41, 3214–3219 (2022). https://doi.org/10.1007/s12598-015-0667-2
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12598-015-0667-2