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Memristor based on two-dimensional titania nanosheets for multi-level storage and information processing

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Abstract

A huge amount of data requires the non-volatile memory (NVM) technology to exhibit large-capacity storage and fast calculation speed. To further solve the bottleneck of storage capacity and speed, nano-memristors based on two-dimensional (2D) layered materials are expected to realize NVM. This study proposes the fabrication of an Ag/2D-TiOx/Pt high-performance memristor device based on the 2D titania nanosheet material. The device demonstrates stable electrical characteristics under the direct current (DC) mode, including bipolar resistive switching (RS) behavior, multi-level memristive modes, and retention property. Also, it exhibits low switching voltage (0.42 V/−0.2 V), high ROFF/RON resistance ratio (105), low switching power (10−9 W/10−5 W), and fast response speed. More importantly, the device realizes information encoding and decoding through a multi-level storage performed by different compliance currents. Multiple devices are connected to the actual circuit to realize a storage function with information processing and programmable characteristics. This work provides a powerful platform for the 2D titania nanosheet application in NVM and information processing.

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Acknowledgements

This work was financially supported by the National key R & D plan “nano frontier” key special project (No. 2021YFA1200502) Cultivation projects of national major R & D project (No. 92164109) National Natural Science Foundation of China (Nos. 61674050 and 61874158), Special project of strategic leading science and technology of Chinese Academy of Sciences (No. XDB44000000-7), Hebei Basic Research Special Key Project (No. F2021201045), the Project of Distinguished Young of Hebei Province (No. A2018201231), the Support Program for the Top Young Talents of Hebei Province (No. 70280011807), the Hundred Persons Plan of Hebei Province (Nos. E2018050004 and E2018050003), the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province (No. SLRC2019018), outstanding young scientific research and innovation team of Hebei University (No. 605020521001), Special support funds for national high level talents (No. 041500120001) High-level Talent Research Startup Project of Hebei University (No. 521000981426), Funded by Science and Technology Project of Hebei Education Department (Nos. QN2020178 and QN2021026), Interdisciplinary Key Research Program of Natural Science of Hebei University (DXK202101), Project of Institute of Life Sciences and Green Development (521100311).

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  1. Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding, 071002, China

    Gang Cao, Chao Gao, **gjuan Wang, **ling Lan & **aobing Yan

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  1. Gang Cao
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  3. **gjuan Wang
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Correspondence to **aobing Yan.

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Cao, G., Gao, C., Wang, J. et al. Memristor based on two-dimensional titania nanosheets for multi-level storage and information processing. Nano Res. 15, 8419–8427 (2022). https://doi.org/10.1007/s12274-022-4437-9

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