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Diffusion-induced parametric dispersion and amplification in doped semiconductor plasmas

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Abstract

Using the hydrodynamic model of semiconductor plasma, the diffusion-induced nonlinear current density and the consequent second-order effective susceptibility are obtained under off-resonant laser irradiation. The analysis deals with the qualitative behaviour of the anomalous parametric dispersion and the gain profile with respect to the excess do** concentration and pump electric field. The analysis suggests that a proper selection of do** level and pump field may lead to either positive or negative enhanced parametric dispersion, which can be of great use in the generation of sequeezed states. It is found that gain maximizes at moderate do** concentration level, which may drastically reduce the fabrication cost of parametric amplifier based on this interaction.

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Authors and Affiliations

  1. School of Studies in Physics, Vikram University, Ujjain, 456 010, India

    N. Yadav & S. Ghosh

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  1. N. Yadav
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  2. S. Ghosh
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Correspondence to S. Ghosh.

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Yadav, N., Ghosh, S. Diffusion-induced parametric dispersion and amplification in doped semiconductor plasmas. Pramana - J Phys 68, 123–128 (2007). https://doi.org/10.1007/s12043-007-0015-7

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  • DOI: https://doi.org/10.1007/s12043-007-0015-7

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