Abstract
Plasma damage of indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) was investigated. The IGZO TFT was fabricated and the performance was measured before and after BCl3 and/or Cl2 plasma treatment to evaluate the IGZO damage. The BCl3 and/or Cl2 plasma deteriorated the IGZO TFT performance significantly even after a short exposure time in the plasma. We propose a new wet etching process to remove a source/drain metal without damaging the underlying IGZO layer. The wet etching process can be utilized for the fabrication of IGZO TFT array using a roll-to-roll process via a self-aligned imprint lithography technique.
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Choi, J.H., Kim, S.J., Kim, H.T. et al. Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma. Korean J. Chem. Eng. 35, 1348–1353 (2018). https://doi.org/10.1007/s11814-018-0034-8
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DOI: https://doi.org/10.1007/s11814-018-0034-8