Abstract
With the rapid development of semiconductor technology, highly integrated circuits (ICs) and future nano-scale devices require large diameter and defect-free monocrystalline silicon wafers. The ongoing innovation from silicon materials is one of the driving forces in future micro and nano-technologies. In this work, the recent developments in the controlling of large diameter silicon crystal growth processes, the improvement of material features by co-do** with the intend-introduced impurities, and the progress of defect engineered silicon wafers (epitaxial silicon wafer, strained silicon, silicon on insulator) are reviewed. It is proposed that the silicon manufacturing infrastructure could still meet the increasingly stringent requirements arising from ULSI circuits and will expand Moore’s law into a couple of decades.
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References
Semiconductor Industry Association. The International Technology Roadmap for Semiconductors (2005 edition). San Jose, California, 2005
Arden W. Future semiconductor material requirements and innovations as projected in the ITRS 2005 roadmap. Materials Science and Engineering: B, 2006, 134(2–3): 104–108
Mozer A P. New developments in silicon Czochralski crystal growth and wafer technology. Materials Science and Engineering: B, 2000, 73(1–3): 36–41
Yu X, Yang D, Ma X, et al. Grown-in defects in nitrogendoped Czochralski silicon. Journal of Applied Physics, 2002, 92(1): 188–194
Chen J, Yang D, Li H, et al. Enhancement effect of germanium on oxygen precipitation in Czochralski silicon. Journal of Applied Physics, 2006, 99(7): 073509 (5 pages)
Tsuya H. Present status and prospect of Si wafers for ultra large scale integration. Japanese Journal of Applied Physics, 2004, 43: 4055–4067
Chandrasekhar S, Kim K M. Growth of large diameter necks for large size CZ silicon, semiconductor silicon. In: Huff H R, Tsuya H, Gssele U, eds. Electronics Division PV. Pennington: The Electrochemical Society, 1998, vols. 98–101, 411
Yip V F S, Wilcox W R. Dislocation elimination in THM growth of GaAs. Journal of Crystal Growth, 1976, 36(1): 29–35
Shiraishi Y, Takano K, Matsubara J, et al. Growth of silicon crystal with a diameter of 400 mm and weight of 400 kg. Journal of Crystal Growth, 2001, 229(1–4): 17–21
Abe T. In: Proceedings of the 6th International Symposium on Ultra Large Scale Integration Science and Technology 1997. Pennington: The Electrochemical Society, 1997, vols. 97–103, 123
Hoshikawa K, Huang X, Taishi T, et al. Dislocation-free Czochralski silicon crystal growth without the dislocationelimination dislocationelimination-necking process. Japanese Journal of Applied Physics, 1999, 38: L1369–L1371
Huang X, Taishi T, Yonenaga I, et al. Dislocation-free Czochralski Si crystal growth without dash necking using a heavily B and Ge codoped Si seed. Japanese Journal of Applied Physics, 2000, 39: L1115–L1117
Watanabe M, Yi KW, Hibiya T, et al. Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by x-ray radiography and large-scale computation. Progress in Crystal Growth and Characterization of Materials, 1999, 38(1–4): 215–238
Yu H, Sui Y, Zhang F, et al. Numerical simulation of a Czochralski silicon crystal growth with a large diameter 300 mm under a cusp magnetic field. Journal of Inorganic Materials, 2005, 20(2): 453–458 (in Chinese)
Wang C, Zhang H, Wang T H, et al. A continuous Czochralski silicon crystal growth system. Journal of Crystal Growth, 2003, 250(1–2): 209–214
Watanabe M, Vizman D, Friedrich J, et al. Large modification of crystal-melt interface shape during Si crystal growth by using electromagnetic Czochralski method (EMCZ). Journal of Crystal Growth, 2006, 292(2): 252–256
Watanabe M, Eguchi M, Wang W, et al. Controlling oxygen concentration and distribution in 200 mm diameter Si crystals using the electromagnetic Czochralski (EMCZ) method. Journal of Crystal Growth, 2002, 237–239: 1657–1662
Virbulis J, Wetzel Th, Tomzig E, et al. Silicon melt convection in large size Czochralski crucibles. Materials Science in Semiconductor Processing, 2002, 5(4–5): 353–359
Gorbunov L, Pedchenko A, Feodorov A, et al. Physical modelling of the melt flow during large-diameter silicon single crystal growth. Journal of Crystal Growth, 2003, 257(1–2): 7–18
Akatsuka M, Sueoka K. Pinning effect of punched-out dislocations in carbon-, nitrogen-or boron-doped silicon wafers. Japanese Journal of Applied Physics, 2001, 40: 1240–1241
Yang D, Que D, Sumino K. Nitrogen effects on thermal donor and shallow thermal donor in silicon. Journal of Applied Physics, 1995, 77(2): 943–944
Nakai K, Inoue Y, Yokota H, et al. Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals. Journal of Applied Physics, 2001, 89(8): 4301–4309
Shimura F, Hockett R S. Nitrogen effect on oxygen precipitation in Czochralski silicon. Applied Physics Letters, 1986, 48(3): 224–226
Cui C, Yang D, Ma X, et al. Effect of nitrogen do** on denuded zone formed by rapid thermal process in Czochralski silicon wafer. Physica B: Condensed Matter, 2006, 376–377: 216–219
Yang D, Chen J, Li H, et al. Micro-defects in Ge doped Czochralski grown Si crystals. Journal of Crystal Growth, 2006, 292(2): 266–271
Li H, Yang D, Ma X, et al. Germanium effect on oxygen precipitation in Czochralski silicon. Journal of Applied Physics, 2004, 96(8): 4161–4165
Taishi T, Huang X, Yonenaga I, et al. Dislocation behavior in heavily germanium-doped silicon crystal. Materials Science in Semiconductor Processing, 2002, 5(4–5): 409–412
Chen J, Yang D, Ma X, et al. Intrinsic gettering Based on rapid thermal annealing in germanium-doped Czochralski silicon. Journal of Applied Physics, 2007, 101(3): 033526 (4 pages)
Porrini M, Voronkov V V, Falster R. The effect of carbon and antimony on grown-in microdefects in Czochralski silicon crystals. Materials Science and Engineering: B, 2006, 134(2–3): 185–188
Nakai K, Kitahara K, Ohta Y, et al. Crystal defects in epitaxial layer on nitrogen-doped Czochralski-grown silicon substrate (II) — Suppression of the crystal defects in epitaxial layer by the control of crystal growth condition and carbon codo**. Japanese Journal of Applied Physics, 2004, 43: 1247–1253
Imai M, Inoue K, Mayusumi M, et al. Surface imperfection behavior during the SiH4 epitaxial growth process. Journal of the Electrochemical Society, 2000, 147(4): 1568–1572
Nakai K, Kitahara K, Ohta Y, et al. In: Richter H, Kittler M, eds. Solid State Phenomena. Switzerland: Scitec Publications Ltd, 2004, vols. 95–96, 11
MiiY J, **e YH, Fitzgerald E A, et al. Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy. Applied Physics Letters, 1991, 59(13): 1611–1613
Kim S-J, Shim T-H, Park J-G, et al. Post-RTA effect on the electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET. Journal of the Korean Physical Society, 2007, 50(2): 514–518
Tezuka T, Sugiyama N, Mizuno T, et al. A novel fabrication technique of ultra-thin and relaxed SiGe buffer layers with high Ge content for sub-100 nm strained silicon-on-insulator MOSFETs. In: Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials, 2000, 472–473
Park J-G, Lee G-S, Kim T-H, et al. Strained Si engineering for nanoscale MOSFETs. Materials Science and Engineering: B, 2006, 134(2–3): 142–153
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Chen, Jh., Yang, Dr. & Que, Dl. Monocrystalline silicon used for integrated circuits: still on the way. Front. Mater. Sci. China 2, 335–344 (2008). https://doi.org/10.1007/s11706-008-0062-0
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DOI: https://doi.org/10.1007/s11706-008-0062-0