Abstract
Very recently, we reported a novel do** method called plasma do** without any external bias (PDWOEB) for the introduction of some impurities into Si and GaN at room temperature (RT). In this work, the RT do** of some impurities, including B, Mg, Ni, Cu, Mn, Cr and Fe, into SiC with ultra-shallow depths of tens of nanometer and very high surface concentrations, approaching or exceeding 1E20/cm3, by using PDWOEB is reported. It has been found for the first time that the do** depths and surface concentrations of these impurities doped into SiC by the PDWOEB increase drastically with increasing do** time and the ferromagnetism of SiC due to Ni do** is demonstrated. Moreover, the approximate diffusivities of B, Mg, Ni, Cu, Mn, Cr and Fe in SiC at RT under plasma stimulation are obtained. The physical mechanism of PDWOEB is further discussed, and some unclear viewpoints are clarified.
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This work is supported by the National Natural Science Foundation of China under Grant Numbers 91433119 and 11674004.
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Hou, R., Li, L., Fang, X. et al. Ultra-Shallow Do** B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion. J. of Materi Eng and Perform 28, 162–168 (2019). https://doi.org/10.1007/s11665-018-3782-z
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DOI: https://doi.org/10.1007/s11665-018-3782-z