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Photoluminescence of nitrogen-doped zinc selenide epilayers

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Abstract

Photoluminescence (PL) studies of nitrogen doped ZnSe epilayers grown by molecular beam epitaxy have been performed as a function of excitation wavelength, power density, and temperature. The broad emission from heavily doped ZnSe:N is composed of two distinct bands which we label as NI and NII. The dominant band NI appears at 2.54 eV, while the NII band position is sensitive to excitation power and occurs between 2.55 and 2.61 eV. The NI emission energy is insensitive to incident power or temperature over the ranges studied. Further, a 69 meV localized phonon of the NI band is observed. We propose that the NI band is related to transitions within a (Vse+-Zn-Nse-)0 close-associate pair. The NII band displays characteristics consistent with the conventional donor acceptor pair model. A third band NIII at 2.65 eV is observed under high-power pulsed excitation. Previous studies of heavily doped ZnSe:N had suggested that the broad emission band was described by a modified donor-acceptor pair model. Our PL study does not support this previous model. In addition, our data suggests that singly ionized selenium vacancy complexes form in heavily doped ZnSe:N and play a role in compensation.

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  1. Department of Physics, West Virginia University, 26506-6315, Morgantown, WV

    M. Moldovan, S. D. Setzler Zhonghaiyu, T. H. Myers, L. E. Halliburton & N. C. Giles

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  1. M. Moldovan
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  2. S. D. Setzler Zhonghaiyu
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  3. T. H. Myers
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  4. L. E. Halliburton
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  5. N. C. Giles
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Moldovan, M., Setzler Zhonghaiyu, S.D., Myers, T.H. et al. Photoluminescence of nitrogen-doped zinc selenide epilayers. J. Electron. Mater. 26, 732–737 (1997). https://doi.org/10.1007/s11664-997-0224-3

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  • DOI: https://doi.org/10.1007/s11664-997-0224-3

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