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Interfacial reaction and electrical property of Ge/Ni/ZnSe for blue laser diode

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Abstract

Interfacial reaction and electrical property of the Ge/Ni/ZnSe have been investigated as a fundamental study to develop ohmic contacts to p-ZnSe, using x-ray diffraction, Auger electron spectroscopy, cross-sectional transmission electron microscopy, and capacitance-voltage measurement. Ni/ZnSe, Ni/Ge systems have been also studied for comparison with the Ge/Ni/p-ZnSe system and the electrical property could be related to the interfacial reaction. After annealing at 170°C, Ni3Se2 and NiGe were formed at Ni/ZnSe and Ge/Ni interface, respectively. The increase of annealing temperature resulted in the decomposition of Ni3Se2 through the reaction with Ge. The change of the Schottky barrier height strongly depended on the annealing temperature. According to the result of Ni/ZnSe interface reaction, Ni3Se2 in the Ni/ZnSe interface lowered the Schottky barrier height. At higher annealing temperature, the Schottky barrier height increased and it was mainly due to the thermal decomposition of ZnSe.

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References

  1. Akira Ishibashi and Yoshifumi Mori, J. Cryst. Growth 138, 677 (1994).

    Article  CAS  Google Scholar 

  2. I. Suemune, H. Masato, K. Nakanishi, Y. Kuroda and M. Yamanish, J. Cryst. Growth 107, 679 (1991).

    Article  CAS  Google Scholar 

  3. M.A. Haase, J. Qiu, J.M. DePuydt and H. Cheng, Appl. Phys. Lett. 59, 1272 (1991).

    Article  CAS  Google Scholar 

  4. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdiov and M. Burns, J. Appl. Phys. 76 (3), 1363 (1994).

    Article  Google Scholar 

  5. Robert F. Davis, G. Keiner, M. Shur, J.W. Dalmour and J.A. Edmond, Proc. IEEE 79 (5), 677 (1991).

    Article  CAS  Google Scholar 

  6. Y. Fan and J. Han, Appl. Phys. Lett. 61, 3160 (1992).

    Article  CAS  Google Scholar 

  7. Y. Lansari and J. Ren, Appl. Phys. Lett. 61, 2554 (1992),

    Article  CAS  Google Scholar 

  8. Y. Fan and J. Han, J. Electron. Mater. 24 (3), 13 (1995).

    Google Scholar 

  9. P.M. Mensz, Appl. Phys. Lett. 64, 2148 (1994).

    Article  CAS  Google Scholar 

  10. J.S. Kwak, J.Y. Shim and H.K. Baik, J. Electron. Mater. 23 (12), 1335 (1994).

    CAS  Google Scholar 

  11. E.D. Marshall, B. Zhang, L.C. Wang, P.F. **o,W.X. Chen, T. Sawada, S.S. Lau, K.L. Kavanagh and T.F. Kuech, J. Appl. Phys. 62 (3), 942 (1987).

    Article  CAS  Google Scholar 

  12. L.C. Wang, S.S. Lau, E.K. Hsieh and J.B. Velebir,Appl. Phys. Lett. 54, 2677 (1989).

    Article  CAS  Google Scholar 

  13. K.W. Boer, Survey of Semiconductor Physics, 2nd ed, (New York: Van Nortrand Reinhold, 1992).

    Google Scholar 

  14. S.P. Muraka, Suicides for VLSI Applications, (New York: Academic, 1983).

    Google Scholar 

  15. Kiwamu Tanahashi, H.J. Takata, A. Otuki and M. Murakami, J. Appl. Phys. 72 (9), 4183 (1992).

    Article  CAS  Google Scholar 

  16. F.R. de Boer and R. Boom, Cohesion in Metals, (Holland: Elsevier, North-Holland Science, 1988).

    Google Scholar 

  17. Y.X. Liu, M.W. Wang, J.O. McCaldin and T.C. McGill, J. Vac. Sci. Technol. B 10 (4), 2072 (1992).

    Article  CAS  Google Scholar 

  18. Kazuhoro Mochizuk, Akihisa Terano, Masayuki Momose, Akira Taike and Shinichi Nakatsuka, Appl. Phys. Lett. 67 (1), 112 (1995).

    Article  Google Scholar 

  19. M. Ukita and F. Hiei, Appl. Phys. Lett. 66, 209 (1995).

    Article  CAS  Google Scholar 

  20. J.D. Guo, F.M. Pan, M.S. Feng, R.J. Guo, P.F. Chou and C.Y. Chang, J. Appl. Phys. 80, 1623 (1996).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Metallurgical Engineering, Yonsei University, 120-749, Seoul, Korea

    Dae-Woo Kim, Joon Seop Kwak, Hee-Soo Park, Hwa Nyun Kim & Hong Koo Baik

  2. Department of Materials Engineering, Kangwoen University, 200-701, Chunchen Kangwoen-Do, Korea

    Sung-Man Lee

  3. Materials Evaluation Center, KRISS, 305-606, Daejon, Korea

    Chang-Soo Kim & Sam-Kyu Noh

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  1. Dae-Woo Kim
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  2. Joon Seop Kwak
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  4. Hwa Nyun Kim
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Kim, DW., Kwak, J.S., Park, HS. et al. Interfacial reaction and electrical property of Ge/Ni/ZnSe for blue laser diode. J. Electron. Mater. 26, 83–89 (1997). https://doi.org/10.1007/s11664-997-0093-9

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  • DOI: https://doi.org/10.1007/s11664-997-0093-9

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