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The Impact of Interfacial Recombination on Hysteresis in Back-Contact Perovskite Solar Cells

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Abstract

A back-contact perovskite solar cell (BC-PSC) has been simulated. The J–V curves were calculated with different degrees of the interfacial recombination, and the characteristics of basic physical phenomena inside the device, including carrier concentration distribution, ion concentration distribution, electric potential change, and carrier recombination rate, have also been investigated. It was found that the effect of the perovskite layer’s upper surface (US) interfacial recombination on the hysteresis phenomenon is greater than that of the perovskite layer’s lower surface (LS) interfacial recombination. In addition, it has been found that the inverted hysteresis phenomenon occurs in the BC-PSC with the LS interfacial recombination. Moreover, the hysteresis loops corresponding to the US interfacial recombination of the perovskite layer were close to the short-circuit current side, and the hysteresis loops corresponding to the LS interfacial recombination of the perovskite layer were close to the open-circuit voltage side. These results indicate that both of the US and LS interface recombinations in the BC-PSC play a crucial role in the hysteresis phenomenon.

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  1. School of energy science and engineering, Nan**g Tech University, Nan**g, 211816, People’s Republic of China

    Peidong Tian, Yanyan Chang & Lian Ji

  2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, People’s Republic of China

    Yanyan Chang & Shulong Lu

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Tian, P., Chang, Y., Lu, S. et al. The Impact of Interfacial Recombination on Hysteresis in Back-Contact Perovskite Solar Cells. J. Electron. Mater. (2024). https://doi.org/10.1007/s11664-024-11308-1

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