Abstract
We report investigations of the optical band gap and the current conduction in cobalt-doped BiFeO3 (BFO)-based thin film devices. It is widely believed that oxygen vacancies play a significant role in determining the current conduction in these devices. As the do** concentration of cobalt increased from 0 mol% to 10 mol%, the optical band gap of doped BiFe1−xCoxO3 (x = 0.00, 0.03, 0.05, 0.10) decreased from 2.59 eV to 2.24 eV. However, the leakage current density was found to increase with cobalt do**. The J–V curve measured under dark conditions appeared linear from 0 to 2 V, indicating nearly ohmic conduction in these devices. The short-circuit current density, open-circuit voltage, fill factor, and photovoltaic efficiency of these Co-doped BFO (for 10 mol%) devices were found to be 9.3 × 10−4 A/cm2, 0.72 V, 32%, and 0.22%, respectively. The photovoltaic efficiency of undoped BFO was found to be better than Co-doped BFO, even though Co do** reduced the optical band gap.
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Acknowledgments
The authors would like to thank BITS Pilani Hyderabad's cleanroom and CAL facilities for providing the essential infrastructure to complete the study. The authors also acknowledge DST-SERB Grant No: DST-EMR-002430 for financially supporting the project.
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WAW: Conceptualization, Methodology, investigation, writing—original draft, formal analysis. BHV: Writing—review and editing. KR: Writing—review and editing, supervision.
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Wani, W.A., Venkataraman, B.H. & Ramaswamy, K. Defect-Induced Control on Current Conduction of Cobalt-Doped BiFeO3 Thin-Film Devices. J. Electron. Mater. 52, 5388–5395 (2023). https://doi.org/10.1007/s11664-023-10481-z
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DOI: https://doi.org/10.1007/s11664-023-10481-z