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Controllable Synthesis of High-Quality Hexagonal Boron Nitride Films on Ni-B Alloy

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Abstract

As an ideal dielectric substrate and protective packaging material for two-dimensional (2D) materials, high-quality hexagonal boron nitride (h-BN) films have attracted much attention. Previous studies have achieved high-quality h-BN on a Ni substrate due to its catalytic activity and B solubility. In this paper, a Ni-B alloy was utilized as a catalytic substrate and B source in the h-BN growth procedure. The growth of h-BN on a sapphire surface was achieved by a two-step growth–transfer method. The thickness of h-BN thin films is controlled by changing the growth time. Raman spectra show that the full width at half-maximum of E2g mode is 8.91 cm−1, which is much lower than most other chemical vapor deposition-grown h-BN. This provides a method for preparing high-quality h-BN and other layered 2D materials on an insulating substrate.

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Acknowledgments

The work has been financially supported by the National Natural Science Foundation of China (61774084), the special fund of Jiangsu province for the transformation of scientific and technological achievements (BA2022204), the Special Scientific Innovation Found of Sihong County (H201901), and the double carbon special fund of Jiangsu province (BE2022005). The Strategic Priority Research Program of the Chinese Academy of Sciences (XDB30000000), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (2017281), the Science and Technology Commission of Shanghai Municipality (20501130200 and 2021-cyxt1-kj03), the National Natural Science Foundation of China (62174169).

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Authors and Affiliations

  1. Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science and Technology, Nan**g University of Aeronautics and Astronautics, Nan**g, 210016, China

    Dewen Chen, Honglie shen, Biao Liu, Zehui Wang, Bingjie Liao, Weibiao Mao & Yufang Li

  2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Tianru Wu

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  1. Dewen Chen
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Contributions

BL: Conceptualization, Formal analysis, Investigation, Methodology, Writing—original draft. HS: Funding acquisition, review & editing, Project administration. BL: Investigation. WM: Methodology. ZW: Validation. JZ: Validation. WM: Validation. YL: Methodology. TW: Funding acquisition, Supervision, review & editing.

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Correspondence to Honglie shen or Tianru Wu.

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Chen, D., shen, H., Liu, B. et al. Controllable Synthesis of High-Quality Hexagonal Boron Nitride Films on Ni-B Alloy. J. Electron. Mater. 52, 4913–4920 (2023). https://doi.org/10.1007/s11664-023-10433-7

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