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Effects of Al Preflow on the Uniformity of an AlN Nucleation Layer and GaN Grown on Si (111) Substrate

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Abstract

In this work, the influence of Al preflow on the uniformity of an aluminum nitride (AlN) nucleation layer grown on Si substrate has been investigated herein, finding that increasing the gas flow rate appropriately during the preflow of aluminum can greatly improve the uniformity of dislocations, as well as the crystal quality and surface morphology of the nucleation layer. The full width at half maximum (FWHM) of the AlN (102) plane in the center, half of the radius and the edge decreases from 826 arcsec/897 arcsec/1196 arcsec to 691 arcsec/738 arcsec/900 arcsec, respectively. Moreover, the sheet resistance uniformity of aluminum gallium nitride/gallium nitride (AlGaN/GaN) grown on the optimized AlN layer is reduced from 6.66% to 2.84%, which is a significant improvement and beneficial to the improvement of the performance of GaN-based devices.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 61904139), the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2019JM-366) and Wuhu and **dian University special fund for industry-university-research cooperation, (Grant No. XWYCXY-012020007).

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Authors and Affiliations

  1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, **dian University, **’an, 710071, China

    **bang Ma, Yachao Zhang, Yixin Yao, Tao Zhang, Yifan Li, Qian Feng, Zhen Bi, **cheng Zhang & Yue Hao

  2. Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, **dian University, **’an, 710071, China

    **bang Ma, Yachao Zhang, Yixin Yao, Tao Zhang, Yifan Li, Qian Feng, Zhen Bi, **cheng Zhang & Yue Hao

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  1. **bang Ma
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  2. Yachao Zhang
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  3. Yixin Yao
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  4. Tao Zhang
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  8. **cheng Zhang
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Contributions

JM: Investigation, Writing-review&editing. YZ: Writing- review&editing, Resources. YY: Investigation. YL: Investigation. TZ: Data curation. QF: Methodology. ZB: Investigation. JZ: Validation. YH: Validation.

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Correspondence to Yachao Zhang or **cheng Zhang.

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Ma, J., Zhang, Y., Yao, Y. et al. Effects of Al Preflow on the Uniformity of an AlN Nucleation Layer and GaN Grown on Si (111) Substrate. J. Electron. Mater. 51, 3342–3349 (2022). https://doi.org/10.1007/s11664-022-09560-4

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  • DOI: https://doi.org/10.1007/s11664-022-09560-4

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